JPS568879A - Insulating gate field effect transistor - Google Patents

Insulating gate field effect transistor

Info

Publication number
JPS568879A
JPS568879A JP8425979A JP8425979A JPS568879A JP S568879 A JPS568879 A JP S568879A JP 8425979 A JP8425979 A JP 8425979A JP 8425979 A JP8425979 A JP 8425979A JP S568879 A JPS568879 A JP S568879A
Authority
JP
Japan
Prior art keywords
substrate
channel
concentration
dope
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8425979A
Other languages
Japanese (ja)
Inventor
Kazuo Terada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8425979A priority Critical patent/JPS568879A/en
Publication of JPS568879A publication Critical patent/JPS568879A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs

Abstract

PURPOSE:To obtain a double channel dope and short channel MOSFET for high speed and high density IC by using a semiconductor substrate with the impurity concentration of predetermined range wherein the amount of dope of deep channel and the length of channel are established as predetermined. CONSTITUTION:Punch-through will effectively be checked if a shallow channel part is made high concentration for an MOSFET having P-type channel dope layers 26, 27 of two layers, which are deep and shallow respectively. On the other hand, a threshold voltage is determined by the concentration of a P-type substrate 21 and the dope amount of all channels. If the concentration of the substrate is set at about 3X10<14>cm<-3>-1X10<15>cm<-3>, the substrate voltage dependence on the threshold voltage becomes small. If a deep channel dope layer 26 with predetermined concentration is provided around a depth of 0.4mum from the surfaces of a gate insulating film 24 and the substrate, punch-through at the substrate under the layer 26 will be prevented. The dose amount of the shallow layer 27 is automatically determined from the dose amount of the layer 26 as the total amount of the channel dope is decided by determining the threshold voltage and the concentration of the substrate. Thus, a high speed MOSFET will be obtained by this structure.
JP8425979A 1979-07-03 1979-07-03 Insulating gate field effect transistor Pending JPS568879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8425979A JPS568879A (en) 1979-07-03 1979-07-03 Insulating gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8425979A JPS568879A (en) 1979-07-03 1979-07-03 Insulating gate field effect transistor

Publications (1)

Publication Number Publication Date
JPS568879A true JPS568879A (en) 1981-01-29

Family

ID=13825448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8425979A Pending JPS568879A (en) 1979-07-03 1979-07-03 Insulating gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS568879A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59167062A (en) * 1983-03-11 1984-09-20 Fujitsu Ltd Manufacture of semiconductor device
JPS6010780A (en) * 1983-06-30 1985-01-19 Fujitsu Ltd Manufacture of semiconductor device
US5270235A (en) * 1988-01-06 1993-12-14 Seiko Epson Corporation Semiconductor device fabrication
JP2002227775A (en) * 2001-01-31 2002-08-14 Yayoi Chemical Industry Co Ltd Electric pump for glue and automatic wallpaper gluing machine

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51114074A (en) * 1975-03-31 1976-10-07 Sony Corp Insulation gate type field effect transistor
JPS52135273A (en) * 1976-05-06 1977-11-12 Mitsubishi Electric Corp Mos type semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51114074A (en) * 1975-03-31 1976-10-07 Sony Corp Insulation gate type field effect transistor
JPS52135273A (en) * 1976-05-06 1977-11-12 Mitsubishi Electric Corp Mos type semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59167062A (en) * 1983-03-11 1984-09-20 Fujitsu Ltd Manufacture of semiconductor device
JPS6010780A (en) * 1983-06-30 1985-01-19 Fujitsu Ltd Manufacture of semiconductor device
US5270235A (en) * 1988-01-06 1993-12-14 Seiko Epson Corporation Semiconductor device fabrication
JP2002227775A (en) * 2001-01-31 2002-08-14 Yayoi Chemical Industry Co Ltd Electric pump for glue and automatic wallpaper gluing machine

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