JPS5690568A - Semiconductor device for photoelectric transducer - Google Patents

Semiconductor device for photoelectric transducer

Info

Publication number
JPS5690568A
JPS5690568A JP16669379A JP16669379A JPS5690568A JP S5690568 A JPS5690568 A JP S5690568A JP 16669379 A JP16669379 A JP 16669379A JP 16669379 A JP16669379 A JP 16669379A JP S5690568 A JPS5690568 A JP S5690568A
Authority
JP
Japan
Prior art keywords
lens
wafer
photoelectric transducer
image
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16669379A
Other languages
Japanese (ja)
Inventor
Kenji Nakauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP16669379A priority Critical patent/JPS5690568A/en
Publication of JPS5690568A publication Critical patent/JPS5690568A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To provide a low cost photoelectric transducer device by a method wherein a lens for making an image at a photoelectric transducer part is integrally molded by a transparent resin when a wafer is molded. CONSTITUTION:P type layer 2 is made at N type Si wafer 1, and the desired circuits 3 are placed at the right and left sides of the layer 2. After the photodiode parts are connected to the circuits 3, a front surface of the wafer 1 is selectively covered by SiO2 film 4, a light shield mask 5 is applied to restrict a light receiving surface and thereby the circuits 3 are shielded against the light. The image is made at the input/output pin 6 under the mask 5 and SiO2 film 4. Then, when the device is molded by a transparent epoxy resin 7, the lens 8 is integrally molded and the image is made on the photodiode. The part of the top surface of the resin 7 other than the lens 8 is covered by the light shield layer 9. The arrangement is simple in its construction and no lens fixing operation is required, no displacement of the lens is found to reduce a cost for the device.
JP16669379A 1979-12-21 1979-12-21 Semiconductor device for photoelectric transducer Pending JPS5690568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16669379A JPS5690568A (en) 1979-12-21 1979-12-21 Semiconductor device for photoelectric transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16669379A JPS5690568A (en) 1979-12-21 1979-12-21 Semiconductor device for photoelectric transducer

Publications (1)

Publication Number Publication Date
JPS5690568A true JPS5690568A (en) 1981-07-22

Family

ID=15835981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16669379A Pending JPS5690568A (en) 1979-12-21 1979-12-21 Semiconductor device for photoelectric transducer

Country Status (1)

Country Link
JP (1) JPS5690568A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01176954U (en) * 1988-06-01 1989-12-18
US4920075A (en) * 1982-06-15 1990-04-24 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device having a lens section
JP2002141518A (en) * 2000-10-30 2002-05-17 Seiko Instruments Inc Structure and manufacturing method of semiconductor module
JP2002246613A (en) * 2001-02-14 2002-08-30 Seiko Instruments Inc Optical function module and manufacturing method thereof
US7157302B2 (en) 1998-06-04 2007-01-02 Micron Technology, Inc. Imaging device and method of manufacture
JP2011009408A (en) * 2009-06-25 2011-01-13 Ricoh Co Ltd Electronic component module and manufacturing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5256776U (en) * 1975-10-23 1977-04-23
JPS534772U (en) * 1976-06-30 1978-01-17

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5256776U (en) * 1975-10-23 1977-04-23
JPS534772U (en) * 1976-06-30 1978-01-17

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4920075A (en) * 1982-06-15 1990-04-24 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device having a lens section
JPH01176954U (en) * 1988-06-01 1989-12-18
US7157302B2 (en) 1998-06-04 2007-01-02 Micron Technology, Inc. Imaging device and method of manufacture
JP2002141518A (en) * 2000-10-30 2002-05-17 Seiko Instruments Inc Structure and manufacturing method of semiconductor module
JP2002246613A (en) * 2001-02-14 2002-08-30 Seiko Instruments Inc Optical function module and manufacturing method thereof
JP2011009408A (en) * 2009-06-25 2011-01-13 Ricoh Co Ltd Electronic component module and manufacturing method

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