JPS5696875A - Semiconductor pressure sensing device and manufacture thereof - Google Patents

Semiconductor pressure sensing device and manufacture thereof

Info

Publication number
JPS5696875A
JPS5696875A JP17272379A JP17272379A JPS5696875A JP S5696875 A JPS5696875 A JP S5696875A JP 17272379 A JP17272379 A JP 17272379A JP 17272379 A JP17272379 A JP 17272379A JP S5696875 A JPS5696875 A JP S5696875A
Authority
JP
Japan
Prior art keywords
diaphragm
lead
support
electrodes
pressure sensing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17272379A
Other languages
Japanese (ja)
Other versions
JPS6325512B2 (en
Inventor
Shoichi Kakimoto
Toru Kameda
Toshio Sogo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17272379A priority Critical patent/JPS5696875A/en
Publication of JPS5696875A publication Critical patent/JPS5696875A/en
Publication of JPS6325512B2 publication Critical patent/JPS6325512B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/681—Shapes or dispositions thereof comprising holes not having chips therein, e.g. for outgassing, underfilling or bond wire passage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires

Landscapes

  • Pressure Sensors (AREA)

Abstract

PURPOSE:To obtain the device with high reliability which is hard to be subjected to the chemical action of measuring gas without the degradation in sensitivity and the delay in response by coating the surface of a diaphragm, its support, metal electrodes and lead wires with Si3N4, TiO2, or Ta2O5. CONSTITUTION:The diaphragm 2, the support 3, a strain gage 4, an impurity diffused layer 5, and the metal electrode 7 are formed by the conventional method, and the lead 12 is connected to the electrodes 7 and 11. Then, the strain gage 4 and the diaphragm 2 are coated with SiO2 6, and the surface of the support 3, the electrode 7, and the lead 12 are coated with Si3N4 by the CVD method, or with TiO2 or Ta2O3 by the reaction sputtering method. Since a pressure sensing element 1 and a mounting table 8 can be kept at a relatively low temperature and an insulating film 13 can be formed, the effects are not applied to the bonding agent 9 between the sensing element 1 and the table 8, and the bonding part between the electrodes 7 and 11 and the lead 12. Since the insulating film 13 is fixed to the diaphragm 2 together with SiO2 6, the film 13 is bent with the diaphragm as one body. Therefore the delay in the response speed can be disregarded, and the surface of the diaphragm can be protected from the chemical action of the gas.
JP17272379A 1979-12-29 1979-12-29 Semiconductor pressure sensing device and manufacture thereof Granted JPS5696875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17272379A JPS5696875A (en) 1979-12-29 1979-12-29 Semiconductor pressure sensing device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17272379A JPS5696875A (en) 1979-12-29 1979-12-29 Semiconductor pressure sensing device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5696875A true JPS5696875A (en) 1981-08-05
JPS6325512B2 JPS6325512B2 (en) 1988-05-25

Family

ID=15947128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17272379A Granted JPS5696875A (en) 1979-12-29 1979-12-29 Semiconductor pressure sensing device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5696875A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878470A (en) * 1981-11-04 1983-05-12 Mitsubishi Electric Corp Detecting device for semiconductor pressure
JP2006200926A (en) * 2005-01-18 2006-08-03 Denso Corp Pressure sensor
JP2013024824A (en) * 2011-07-26 2013-02-04 Denso Corp Manufacturing method of sensor device
JP2023540238A (en) * 2020-08-25 2023-09-22 エドワーズ ライフサイエンシーズ コーポレイション Embedded pressure sensor packaging

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53103375A (en) * 1977-02-22 1978-09-08 Toshiba Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53103375A (en) * 1977-02-22 1978-09-08 Toshiba Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878470A (en) * 1981-11-04 1983-05-12 Mitsubishi Electric Corp Detecting device for semiconductor pressure
JP2006200926A (en) * 2005-01-18 2006-08-03 Denso Corp Pressure sensor
JP2013024824A (en) * 2011-07-26 2013-02-04 Denso Corp Manufacturing method of sensor device
JP2023540238A (en) * 2020-08-25 2023-09-22 エドワーズ ライフサイエンシーズ コーポレイション Embedded pressure sensor packaging

Also Published As

Publication number Publication date
JPS6325512B2 (en) 1988-05-25

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