JPS5698780A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS5698780A JPS5698780A JP17349379A JP17349379A JPS5698780A JP S5698780 A JPS5698780 A JP S5698780A JP 17349379 A JP17349379 A JP 17349379A JP 17349379 A JP17349379 A JP 17349379A JP S5698780 A JPS5698780 A JP S5698780A
- Authority
- JP
- Japan
- Prior art keywords
- error
- memory
- data
- memory cells
- address
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009825 accumulation Methods 0.000 abstract 2
- 230000006378 damage Effects 0.000 abstract 1
- 238000001514 detection method Methods 0.000 abstract 1
Landscapes
- Techniques For Improving Reliability Of Storages (AREA)
- Debugging And Monitoring (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
PURPOSE: To prevent the accumulation of a data error stored in a readout address by detecting the error by reading all data out of memory cells within a definite time during refreshing operation.
CONSTITUTION: A refresh address generating circuit generates cyclically both a refresh address (row address) required for refreshing and a column address selecting a readout data bit to read all memory cells within a definite time. In the refreshing of memory 21, the said refresh address generating circuit reads all data out of the memory cells and provides error detection 28 of the readout data, and if an error is detected, it is displayed in a memory device by error display circuit 29. In case of random memory destruction due to (α) rays, etc., the accumulation of the error is prevented, and the reliability is improved.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17349379A JPS5698780A (en) | 1979-12-29 | 1979-12-29 | Semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17349379A JPS5698780A (en) | 1979-12-29 | 1979-12-29 | Semiconductor memory device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5698780A true JPS5698780A (en) | 1981-08-08 |
Family
ID=15961523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17349379A Pending JPS5698780A (en) | 1979-12-29 | 1979-12-29 | Semiconductor memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5698780A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6242396A (en) * | 1985-08-15 | 1987-02-24 | マイテル・コ−ポレ−シヨン | Dynamic memory refresh and parity checking circuit |
| JP2014502771A (en) * | 2010-12-10 | 2014-02-03 | クアルコム,インコーポレイテッド | Embedded DRAM with low power self-correction capability |
| US9583219B2 (en) | 2014-09-27 | 2017-02-28 | Qualcomm Incorporated | Method and apparatus for in-system repair of memory in burst refresh |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52127036A (en) * | 1976-04-16 | 1977-10-25 | Mitsubishi Electric Corp | Diagnostic system |
-
1979
- 1979-12-29 JP JP17349379A patent/JPS5698780A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52127036A (en) * | 1976-04-16 | 1977-10-25 | Mitsubishi Electric Corp | Diagnostic system |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6242396A (en) * | 1985-08-15 | 1987-02-24 | マイテル・コ−ポレ−シヨン | Dynamic memory refresh and parity checking circuit |
| JP2014502771A (en) * | 2010-12-10 | 2014-02-03 | クアルコム,インコーポレイテッド | Embedded DRAM with low power self-correction capability |
| US9583219B2 (en) | 2014-09-27 | 2017-02-28 | Qualcomm Incorporated | Method and apparatus for in-system repair of memory in burst refresh |
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