JPS57102023A - Method of forming metallized dielectric structure - Google Patents

Method of forming metallized dielectric structure

Info

Publication number
JPS57102023A
JPS57102023A JP56171941A JP17194181A JPS57102023A JP S57102023 A JPS57102023 A JP S57102023A JP 56171941 A JP56171941 A JP 56171941A JP 17194181 A JP17194181 A JP 17194181A JP S57102023 A JPS57102023 A JP S57102023A
Authority
JP
Japan
Prior art keywords
dielectric structure
metallized dielectric
forming metallized
forming
metallized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56171941A
Other languages
English (en)
Japanese (ja)
Inventor
Nikorasu Epifuaano Robaato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS57102023A publication Critical patent/JPS57102023A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68Organic materials, e.g. photoresists
    • H10P14/683Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412Deposition of metallic or metal-silicide materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326Deposition processes
    • H10P14/6342Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
JP56171941A 1980-10-29 1981-10-26 Method of forming metallized dielectric structure Pending JPS57102023A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US20176780A 1980-10-29 1980-10-29

Publications (1)

Publication Number Publication Date
JPS57102023A true JPS57102023A (en) 1982-06-24

Family

ID=22747208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56171941A Pending JPS57102023A (en) 1980-10-29 1981-10-26 Method of forming metallized dielectric structure

Country Status (4)

Country Link
JP (1) JPS57102023A (it)
DE (1) DE3141680A1 (it)
IT (1) IT1153991B (it)
SE (1) SE8105918L (it)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925246A (ja) * 1982-08-02 1984-02-09 Nec Corp 半導体装置の製造方法
JPS62188246A (ja) * 1986-02-13 1987-08-17 Nec Corp 半導体装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3231457A1 (de) * 1982-08-24 1984-03-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum erzeugen von strukturen fuer integrierte halbleiterschaltungen durch reaktives ionenaetzen
DE3234907A1 (de) * 1982-09-21 1984-03-22 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer monolithisch integrierten schaltung
JPS5955037A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体装置
DE3328339A1 (de) * 1983-08-05 1985-02-14 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur metallisierung einer kunststoffoberflaeche
DE3429082A1 (de) * 1984-08-07 1986-02-27 Siemens AG, 1000 Berlin und 8000 München Steuerscheibe fuer gasentladungsanzeige
DE3615519A1 (de) * 1986-05-07 1987-11-12 Siemens Ag Verfahren zum erzeugen von kontaktloechern mit abgeschraegten flanken in zwischenoxidschichten
DE69219998T2 (de) * 1991-10-31 1997-12-18 Sgs Thomson Microelectronics Verfahren zur Entfernung von Polymeren aus Sacklöchern in Halbleitervorrichtungen
DE4311807C2 (de) * 1993-04-03 1998-03-19 Atotech Deutschland Gmbh Verfahren zur Beschichtung von Metallen und Anwendung des Verfahrens in der Leiterplattentechnik
US5597983A (en) * 1994-02-03 1997-01-28 Sgs-Thomson Microelectronics, Inc. Process of removing polymers in semiconductor vias
TW554405B (en) * 2000-12-22 2003-09-21 Seiko Epson Corp Pattern generation method and apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925246A (ja) * 1982-08-02 1984-02-09 Nec Corp 半導体装置の製造方法
JPS62188246A (ja) * 1986-02-13 1987-08-17 Nec Corp 半導体装置

Also Published As

Publication number Publication date
IT1153991B (it) 1987-01-21
SE8105918L (sv) 1982-04-30
IT8124331A0 (it) 1981-10-05
DE3141680A1 (de) 1982-06-16

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