JPS5710240A - Forming method of insulating film - Google Patents

Forming method of insulating film

Info

Publication number
JPS5710240A
JPS5710240A JP8443180A JP8443180A JPS5710240A JP S5710240 A JPS5710240 A JP S5710240A JP 8443180 A JP8443180 A JP 8443180A JP 8443180 A JP8443180 A JP 8443180A JP S5710240 A JPS5710240 A JP S5710240A
Authority
JP
Japan
Prior art keywords
insulating film
substrates
tube
specimens
infrared rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8443180A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0345534B2 (2
Inventor
Kenji Morisane
Yoshifumi Mori
Ario Mita
Kazuo Nishiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP8443180A priority Critical patent/JPS5710240A/ja
Publication of JPS5710240A publication Critical patent/JPS5710240A/ja
Publication of JPH0345534B2 publication Critical patent/JPH0345534B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP8443180A 1980-06-20 1980-06-20 Forming method of insulating film Granted JPS5710240A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8443180A JPS5710240A (en) 1980-06-20 1980-06-20 Forming method of insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8443180A JPS5710240A (en) 1980-06-20 1980-06-20 Forming method of insulating film

Publications (2)

Publication Number Publication Date
JPS5710240A true JPS5710240A (en) 1982-01-19
JPH0345534B2 JPH0345534B2 (2) 1991-07-11

Family

ID=13830389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8443180A Granted JPS5710240A (en) 1980-06-20 1980-06-20 Forming method of insulating film

Country Status (1)

Country Link
JP (1) JPS5710240A (2)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586137A (ja) * 1981-07-03 1983-01-13 Nec Corp 化合物半導体上に絶縁膜を形成する方法
JPS60258915A (ja) * 1984-03-07 1985-12-20 ゼネラル　シグナル　コ−ポレ−シヨン レ−ザ−化学気相沈積方法および装置
JPS6279627A (ja) * 1985-09-30 1987-04-13 ジエ−ムス　エフ　キバンズ 半導体材料の表面を高温で反応させる方法
JPS62222631A (ja) * 1986-03-24 1987-09-30 Nec Corp 気相成長装置
FR2605647A1 (fr) * 1986-10-27 1988-04-29 Nissim Yves Procede de depot en phase vapeur par flash thermique d'une couche isolante sur un substrat en materiau iii-v, application a la fabrication d'une structure mis
JPH0645322A (ja) * 1992-07-22 1994-02-18 Nec Corp 窒化シリコン膜の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS508473A (2) * 1972-11-29 1975-01-28

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS508473A (2) * 1972-11-29 1975-01-28

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586137A (ja) * 1981-07-03 1983-01-13 Nec Corp 化合物半導体上に絶縁膜を形成する方法
JPS60258915A (ja) * 1984-03-07 1985-12-20 ゼネラル　シグナル　コ−ポレ−シヨン レ−ザ−化学気相沈積方法および装置
JPS6279627A (ja) * 1985-09-30 1987-04-13 ジエ−ムス　エフ　キバンズ 半導体材料の表面を高温で反応させる方法
JPS62222631A (ja) * 1986-03-24 1987-09-30 Nec Corp 気相成長装置
FR2605647A1 (fr) * 1986-10-27 1988-04-29 Nissim Yves Procede de depot en phase vapeur par flash thermique d'une couche isolante sur un substrat en materiau iii-v, application a la fabrication d'une structure mis
JPH0645322A (ja) * 1992-07-22 1994-02-18 Nec Corp 窒化シリコン膜の製造方法

Also Published As

Publication number Publication date
JPH0345534B2 (2) 1991-07-11

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