JPS57109331A - Formation of resist pattern - Google Patents

Formation of resist pattern

Info

Publication number
JPS57109331A
JPS57109331A JP55183997A JP18399780A JPS57109331A JP S57109331 A JPS57109331 A JP S57109331A JP 55183997 A JP55183997 A JP 55183997A JP 18399780 A JP18399780 A JP 18399780A JP S57109331 A JPS57109331 A JP S57109331A
Authority
JP
Japan
Prior art keywords
resist
layer
exposed
film
resist film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55183997A
Other languages
Japanese (ja)
Inventor
Haruyori Tanaka
Katsuhide Onose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55183997A priority Critical patent/JPS57109331A/en
Publication of JPS57109331A publication Critical patent/JPS57109331A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To form the photoresist pattern having a high form ratio by a method wherein a negative type resist films, which were formed in double-layer or triple layer and exposed, are developed and treated simultaneously. CONSTITUTION:The first layer of resist film is formed on a substrate 1, and a protective film for the resist is coated on the resist film. After the protective film has been removed, the resist film is exposed by irradiating ultraviolet rays through the intermediary of a photomask. On the exposed first layer of resist film, the second layer of resist film and a resist protective film are formed. After the resist protective film has been removed, the resist film is exposed by irradiating ultraviolet rays through the resist film of the second layer. And a non-exposed parts 7 and 7' are washed away by a developing solvent, exposed parts 6 and 6' are light-cured, and the resist pattern is remained on the substrate.
JP55183997A 1980-12-26 1980-12-26 Formation of resist pattern Pending JPS57109331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55183997A JPS57109331A (en) 1980-12-26 1980-12-26 Formation of resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55183997A JPS57109331A (en) 1980-12-26 1980-12-26 Formation of resist pattern

Publications (1)

Publication Number Publication Date
JPS57109331A true JPS57109331A (en) 1982-07-07

Family

ID=16145509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55183997A Pending JPS57109331A (en) 1980-12-26 1980-12-26 Formation of resist pattern

Country Status (1)

Country Link
JP (1) JPS57109331A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995018991A1 (en) * 1994-01-07 1995-07-13 Forschungszentrum Karlsruhe Gmbh Microstructured body gradual construction process and thus produced microstructured bodies
JP2009032862A (en) * 2007-07-26 2009-02-12 Tanaka Seiki Kk Spindle drive
WO2010097280A1 (en) * 2009-02-27 2010-09-02 Unilever Plc A spray nozzle
JP2010205361A (en) * 2009-03-05 2010-09-16 Nitto Denko Corp Suspension substrate with circuit and its manufacturing method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995018991A1 (en) * 1994-01-07 1995-07-13 Forschungszentrum Karlsruhe Gmbh Microstructured body gradual construction process and thus produced microstructured bodies
JP2009032862A (en) * 2007-07-26 2009-02-12 Tanaka Seiki Kk Spindle drive
WO2010097280A1 (en) * 2009-02-27 2010-09-02 Unilever Plc A spray nozzle
JP2010205361A (en) * 2009-03-05 2010-09-16 Nitto Denko Corp Suspension substrate with circuit and its manufacturing method
US8450613B2 (en) 2009-03-05 2013-05-28 Nitto Denko Corporation Suspension board with circuit and production method thereof
US8927870B2 (en) 2009-03-05 2015-01-06 Nitto Denko Corporation Suspension board with circuit and producing method thereof

Similar Documents

Publication Publication Date Title
JPS5730829A (en) Micropattern formation method
JPS57190912A (en) Production of color filter
JPS57109331A (en) Formation of resist pattern
JPS54134561A (en) Pattern forming method
JPS5595324A (en) Manufacturing method of semiconductor device
JPS57100428A (en) Method for photomechanical process
JPS5515149A (en) Forming method of resist for microfabrication
JPS55157737A (en) Resist pattern forming method for photofabrication
JPS57102015A (en) Pattern formation
JPS5339060A (en) Lot number marking method to wafers
JPS55135837A (en) Manufacture of photomask
JPS5742043A (en) Photosensitive material
KR970008364A (en) Fine pattern formation method
JPS5689741A (en) Dryplate for photomasking
JPS56114327A (en) Patterning method
JPS5712522A (en) Forming method of pattern
JPS5794750A (en) Formation of micropattern
JPS5710232A (en) Forming method for resist pattern
JPS59155930A (en) Forming method of minute pattern
JPS5636134A (en) Forming method for pattern of semiconductor substrate
JPS6427228A (en) Forming method for fine pattern of semiconductor element
JPS56146891A (en) Selective plating method
JPS55128831A (en) Method of making photoresist film pattern
JPS57118641A (en) Lifting-off method
JPS5617348A (en) Exposing method