JPS5710975Y2 - - Google Patents
Info
- Publication number
- JPS5710975Y2 JPS5710975Y2 JP6943877U JP6943877U JPS5710975Y2 JP S5710975 Y2 JPS5710975 Y2 JP S5710975Y2 JP 6943877 U JP6943877 U JP 6943877U JP 6943877 U JP6943877 U JP 6943877U JP S5710975 Y2 JPS5710975 Y2 JP S5710975Y2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Rigid Containers With Two Or More Constituent Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6943877U JPS5710975Y2 (de) | 1977-05-31 | 1977-05-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6943877U JPS5710975Y2 (de) | 1977-05-31 | 1977-05-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53164572U JPS53164572U (de) | 1978-12-23 |
| JPS5710975Y2 true JPS5710975Y2 (de) | 1982-03-03 |
Family
ID=28978261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6943877U Expired JPS5710975Y2 (de) | 1977-05-31 | 1977-05-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5710975Y2 (de) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7221011B2 (en) | 2001-09-07 | 2007-05-22 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-gradient drain doping profile |
| US7253042B2 (en) | 2001-09-07 | 2007-08-07 | Power Integrations, Inc. | Method of fabricating a high-voltage transistor with an extended drain structure |
| US7468536B2 (en) | 2007-02-16 | 2008-12-23 | Power Integrations, Inc. | Gate metal routing for transistor with checkerboarded layout |
| US7557406B2 (en) | 2007-02-16 | 2009-07-07 | Power Integrations, Inc. | Segmented pillar layout for a high-voltage vertical transistor |
| US7595523B2 (en) | 2007-02-16 | 2009-09-29 | Power Integrations, Inc. | Gate pullback at ends of high-voltage vertical transistor structure |
-
1977
- 1977-05-31 JP JP6943877U patent/JPS5710975Y2/ja not_active Expired
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7221011B2 (en) | 2001-09-07 | 2007-05-22 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-gradient drain doping profile |
| US7253042B2 (en) | 2001-09-07 | 2007-08-07 | Power Integrations, Inc. | Method of fabricating a high-voltage transistor with an extended drain structure |
| US7459366B2 (en) | 2001-09-07 | 2008-12-02 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-gradient drain doping profile |
| US7468536B2 (en) | 2007-02-16 | 2008-12-23 | Power Integrations, Inc. | Gate metal routing for transistor with checkerboarded layout |
| US7557406B2 (en) | 2007-02-16 | 2009-07-07 | Power Integrations, Inc. | Segmented pillar layout for a high-voltage vertical transistor |
| US7595523B2 (en) | 2007-02-16 | 2009-09-29 | Power Integrations, Inc. | Gate pullback at ends of high-voltage vertical transistor structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53164572U (de) | 1978-12-23 |