JPS571271A - Photodiode - Google Patents

Photodiode

Info

Publication number
JPS571271A
JPS571271A JP7536780A JP7536780A JPS571271A JP S571271 A JPS571271 A JP S571271A JP 7536780 A JP7536780 A JP 7536780A JP 7536780 A JP7536780 A JP 7536780A JP S571271 A JPS571271 A JP S571271A
Authority
JP
Japan
Prior art keywords
compound
atomic
evaporated
constitution
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7536780A
Other languages
Japanese (ja)
Inventor
Koichi Sakurai
Tatsumi Ishiwatari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP7536780A priority Critical patent/JPS571271A/en
Publication of JPS571271A publication Critical patent/JPS571271A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/121—Active materials comprising only selenium or only tellurium

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain a device which is characterized by high performance, a large area, and long dimensions, by layering an Se-As compound layer wherein 50 atomic % or more Se in included and a layer wherein Se content is further increased, and providing opposing electrodes. CONSTITUTION:SnO2 2 is evaporated on quartz glass 1. The mixture of Se or 50 atomic % or more and As of 50 atomic % or less is heat-treated in a vacuum and then quickly cooled. Thus, the Se-As compound is prepared and evaporated 3 to about 4,000Angstrom on an electrode 2 in the vacuum. Then the compound having more Se or pure Se is further evaporated to about 1.000Angstrom , and a film 4 is layered. If the total thickness of the films 3 and 4 is 2,000Angstrom or less, pin holes will be formed. An Au electrode 5 is provided on the film 4. If Te, P, and the like are added to the Se- As compound as impurities, the performance can be enhanced in response to the purposes. In this constitution, the device characterized by the small leakage currents and the quick response speed can be obtained, and the long dimensions and the large area can be realized.
JP7536780A 1980-06-04 1980-06-04 Photodiode Pending JPS571271A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7536780A JPS571271A (en) 1980-06-04 1980-06-04 Photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7536780A JPS571271A (en) 1980-06-04 1980-06-04 Photodiode

Publications (1)

Publication Number Publication Date
JPS571271A true JPS571271A (en) 1982-01-06

Family

ID=13574173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7536780A Pending JPS571271A (en) 1980-06-04 1980-06-04 Photodiode

Country Status (1)

Country Link
JP (1) JPS571271A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58218989A (en) * 1982-06-12 1983-12-20 難波プレス工業株式会社 Production of integrally molded seat

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58218989A (en) * 1982-06-12 1983-12-20 難波プレス工業株式会社 Production of integrally molded seat

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