JPS5713178A - Method and device for surface treatment - Google Patents

Method and device for surface treatment

Info

Publication number
JPS5713178A
JPS5713178A JP8655480A JP8655480A JPS5713178A JP S5713178 A JPS5713178 A JP S5713178A JP 8655480 A JP8655480 A JP 8655480A JP 8655480 A JP8655480 A JP 8655480A JP S5713178 A JPS5713178 A JP S5713178A
Authority
JP
Japan
Prior art keywords
substrate
ions
charge
scattered
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8655480A
Other languages
Japanese (ja)
Other versions
JPS5744746B2 (en
Inventor
Kiyoshi Morimoto
Toshinori Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Futaba Corp
Original Assignee
Futaba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Futaba Corp filed Critical Futaba Corp
Priority to JP8655480A priority Critical patent/JPS5713178A/en
Priority to DE3124987A priority patent/DE3124987C2/en
Publication of JPS5713178A publication Critical patent/JPS5713178A/en
Publication of JPS5744746B2 publication Critical patent/JPS5744746B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To improve working efficiency and to stably realize the low acceleration and large current transportation of ions by offsetting space charge by the charge of both positive and negative ions, or adjusting the charge contents of both in performing vapor deposition, implantation, working, etc.
CONSTITUTION: A negative ion generating system 60 and a positive ion generating system 70 are provided on both sides of a substrate 22. Vapor of Cs or the like is introduced to an ion source 1 of the system 60, and electric power is supplied to a heating power source 3, thereby drawing out Cs+. This is passed through a focusing lens system constituted of electrodes 5, 6, and is drawn out through a sputtering target 10, a focusing lens system of electrodes 12, 13, 14, etc., whereby a B- beam 16 is obtained. This is passed through a deflecting electrode 17 and a mass separator 20, and is scattered on the surface of the substrate 22 through a slit 21. A gaseous compound of boron type or the like is supplied to the ion source 31 of the system 70, and the B+ beam is scattered on the substrate 22 surface by the operation similar to that for the system 60. Both these ions are joined in a suitably adjusted state, the substrate 22 is treated of the surface as desired.
COPYRIGHT: (C)1982,JPO&Japio
JP8655480A 1980-06-27 1980-06-27 Method and device for surface treatment Granted JPS5713178A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8655480A JPS5713178A (en) 1980-06-27 1980-06-27 Method and device for surface treatment
DE3124987A DE3124987C2 (en) 1980-06-27 1981-06-25 Method for the surface treatment of a substrate and device for carrying out the method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8655480A JPS5713178A (en) 1980-06-27 1980-06-27 Method and device for surface treatment

Publications (2)

Publication Number Publication Date
JPS5713178A true JPS5713178A (en) 1982-01-23
JPS5744746B2 JPS5744746B2 (en) 1982-09-22

Family

ID=13890216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8655480A Granted JPS5713178A (en) 1980-06-27 1980-06-27 Method and device for surface treatment

Country Status (2)

Country Link
JP (1) JPS5713178A (en)
DE (1) DE3124987C2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019512610A (en) * 2016-04-05 2019-05-16 株式会社ファインソリューション Plasma process equipment that can adjust the amount of charge

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6064850U (en) * 1983-10-13 1985-05-08 ジューキ株式会社 Printer electromagnetic drive
JPH03111578A (en) * 1989-06-29 1991-05-13 Toshiba Corp Method for forming thin film and device for forming thin film
DE102008060838A1 (en) 2008-12-05 2010-06-10 Zounek, Alexis, Dr. Coating substrates, comprises generating plasma with positively charged ion that is accelerated on substrate by negative bias potential, and reducing and/or compensating positive loading of substrate by irradiating substrate with electron
CN102637572A (en) * 2011-02-15 2012-08-15 上海凯世通半导体有限公司 Ion implantion device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3847115A (en) * 1973-05-02 1974-11-12 Nasa System for depositing thin films

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019512610A (en) * 2016-04-05 2019-05-16 株式会社ファインソリューション Plasma process equipment that can adjust the amount of charge

Also Published As

Publication number Publication date
DE3124987A1 (en) 1982-03-25
DE3124987C2 (en) 1989-12-14
JPS5744746B2 (en) 1982-09-22

Similar Documents

Publication Publication Date Title
US4381453A (en) System and method for deflecting and focusing a broad ion beam
WO1989004586A3 (en) Method and apparatus for generating particle beams
WO1998033199A3 (en) Ion accelerator for use in ion implanter
JPS5516321A (en) Electrostatic radiant type electronic gun
EP0740327A3 (en) Ion beam processing apparatus
WO1987007916A1 (en) Thin film forming apparatus
JPS57208029A (en) Electric power unit for ion source
US3940615A (en) Wide angle isotope separator
US3939354A (en) Method and apparatus for separation of ions from a plasma
JPS56156662A (en) Device for ion implantation
JPS57191950A (en) Charged-particle source
ATE114870T1 (en) UNIVERSAL COLD CATHODE ION GENERATION AND ACCELERATION DEVICE.
US4329586A (en) Electron energy recovery system for negative ion sources
SU459169A1 (en) Perezar bottom target
SU689500A1 (en) Method of pulsed plasma acceleration
JPS5681151A (en) Particle charging apparatus
JPH0461072B2 (en)
SU422128A1 (en) Method of accelerating positively charged particles
SU1764335A1 (en) Method and device for pulse-periodic ion treatment of article
JPS6481200A (en) Outside device for beaming ion to cyclotron
JPS6481185A (en) Vacuum trigger gap
SU1385900A1 (en) Method and apparatus for ion beam production
JPS5927383B2 (en) Ion beam thin film production equipment
JPS6463093A (en) Treatment of waste liquid of photographic processing
SU467707A1 (en) Method of ion acceleration