JPS57143861A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57143861A
JPS57143861A JP56028230A JP2823081A JPS57143861A JP S57143861 A JPS57143861 A JP S57143861A JP 56028230 A JP56028230 A JP 56028230A JP 2823081 A JP2823081 A JP 2823081A JP S57143861 A JPS57143861 A JP S57143861A
Authority
JP
Japan
Prior art keywords
oxide film
region
base
polycrystal silicon
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56028230A
Other languages
Japanese (ja)
Inventor
Shuichi Kameyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56028230A priority Critical patent/JPS57143861A/en
Publication of JPS57143861A publication Critical patent/JPS57143861A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain an integrated circuit having high dielectric resistance between a base and an emitter by oxidizing the surface of polycrystal silicon functioning as the emitter and boring the contact hole of the base to a region prescribed by the polycrystal silicon and a thick oxide film is a self-alignment shape. CONSTITUTION:A buried region 102 and an N type layer 103 are formed onto a P<-> type substrate 101 through a normal method, the thick oxide film 104 for isolating elements is shaped, and the P type base region 106 is molded through the implantation of boron ions. A polycrystal silicon layer 107 is deposited onto the whole surface, and changed into a polycrystal silicon pattern 108 through the patterning of the layer 107, and an oxide film 109 is formed to the surface through a thermal oxidation method. A thin oxide film 110 is also shaped onto the base region 106 at that time. An impurity is diffused from the pattern 108, and an N<+> type emitter region 111 is formed. Lastly, the thin oxide film 110 is removed using the thick oxide film 104 and the surface oxide film 109 as masks, and the P<+> base contact region 113 is shaped to the opening section.
JP56028230A 1981-02-27 1981-02-27 Manufacture of semiconductor device Pending JPS57143861A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56028230A JPS57143861A (en) 1981-02-27 1981-02-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56028230A JPS57143861A (en) 1981-02-27 1981-02-27 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57143861A true JPS57143861A (en) 1982-09-06

Family

ID=12242792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56028230A Pending JPS57143861A (en) 1981-02-27 1981-02-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57143861A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117579A (en) * 1976-03-30 1977-10-03 Nec Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117579A (en) * 1976-03-30 1977-10-03 Nec Corp Semiconductor device

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