JPS5715420A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5715420A
JPS5715420A JP9044780A JP9044780A JPS5715420A JP S5715420 A JPS5715420 A JP S5715420A JP 9044780 A JP9044780 A JP 9044780A JP 9044780 A JP9044780 A JP 9044780A JP S5715420 A JPS5715420 A JP S5715420A
Authority
JP
Japan
Prior art keywords
layer
concentration
substrate
atoms
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9044780A
Other languages
Japanese (ja)
Inventor
Masamitsu Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP9044780A priority Critical patent/JPS5715420A/en
Publication of JPS5715420A publication Critical patent/JPS5715420A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a back-surface electrode having excellent adhesion, by providing an ion implanted layer having higher concentration than a substrate but having the same conductive type on the back surface of the si substrate, and providing ohmic electrode directly thereon or on the exposed part of the surface layer. CONSTITUTION:The back surface of an N<+> collector 1 whose concentration is 5X10<18> atoms/cm<3> is ground, and P ions of 1X10<16> atoms/cm<3> are implanted at 100KeV. Then, a high-concentration layer 13, whose surface concentration is 8X 10<19> atoms/cm<3> is formed. Cr, Ni, Sn, and A gare sequentially evaporated on said layer 13 directly. Or they are evaporated on a high concentration layer 13' of 4X 10<20>/cm<3>, which is exposed by etching out the surface layer to the depth of about 0.2mu and an electrode 10 is obtained. In this constitution, the ohmic electrode which strongly adheres to the semiconductor substrate can be obtained, and the device having excellent characteristics is obtained. In the case of a P<+> substrate, the charactristics can be likewise improved by the implantation of B ions.
JP9044780A 1980-06-30 1980-06-30 Manufacture of semiconductor device Pending JPS5715420A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9044780A JPS5715420A (en) 1980-06-30 1980-06-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9044780A JPS5715420A (en) 1980-06-30 1980-06-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5715420A true JPS5715420A (en) 1982-01-26

Family

ID=13998864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9044780A Pending JPS5715420A (en) 1980-06-30 1980-06-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5715420A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5242862A (en) * 1990-02-14 1993-09-07 Nippondenso Co., Ltd. Semiconductor device and method of manufacturing same
US5342793A (en) * 1990-02-20 1994-08-30 Sgs-Thomson Microelectronics, S.R.L. Process for obtaining multi-layer metallization of the back of a semiconductor substrate
JP2004103763A (en) * 2002-09-09 2004-04-02 Fuji Electric Device Technology Co Ltd Method for manufacturing semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5179563A (en) * 1975-01-06 1976-07-10 Hitachi Ltd HANDOTAISOCHINOSEIZOHOHO

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5179563A (en) * 1975-01-06 1976-07-10 Hitachi Ltd HANDOTAISOCHINOSEIZOHOHO

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5242862A (en) * 1990-02-14 1993-09-07 Nippondenso Co., Ltd. Semiconductor device and method of manufacturing same
US5663096A (en) * 1990-02-14 1997-09-02 Nippondenso Co., Ltd. Method of manufacturing a vertical semiconductor device with ground surface providing a reduced ON resistance
US5689130A (en) * 1990-02-14 1997-11-18 Nippondenso Co., Ltd. Vertical semiconductor device with ground surface providing a reduced ON resistance
US5994187A (en) * 1990-02-14 1999-11-30 Nippondenso Co., Ltd. Method of manufacturing a vertical semiconductor device
US6498366B1 (en) 1990-02-14 2002-12-24 Denso Corporation Semiconductor device that exhibits decreased contact resistance between substrate and drain electrode
US6649478B2 (en) 1990-02-14 2003-11-18 Denso Corporation Semiconductor device and method of manufacturing same
US6903417B2 (en) 1990-02-14 2005-06-07 Denso Corporation Power semiconductor device
US6949434B2 (en) 1990-02-14 2005-09-27 Denso Corporation Method of manufacturing a vertical semiconductor device
US7064033B2 (en) 1990-02-14 2006-06-20 Denso Corporation Semiconductor device and method of manufacturing same
US5342793A (en) * 1990-02-20 1994-08-30 Sgs-Thomson Microelectronics, S.R.L. Process for obtaining multi-layer metallization of the back of a semiconductor substrate
JP2004103763A (en) * 2002-09-09 2004-04-02 Fuji Electric Device Technology Co Ltd Method for manufacturing semiconductor device

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