JPS57155366A - Apparatus for manufacturing semiconductor - Google Patents

Apparatus for manufacturing semiconductor

Info

Publication number
JPS57155366A
JPS57155366A JP3941881A JP3941881A JPS57155366A JP S57155366 A JPS57155366 A JP S57155366A JP 3941881 A JP3941881 A JP 3941881A JP 3941881 A JP3941881 A JP 3941881A JP S57155366 A JPS57155366 A JP S57155366A
Authority
JP
Japan
Prior art keywords
container
semiconductor wafer
metal source
flow
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3941881A
Other languages
English (en)
Inventor
Toshifumi Takeda
Hideo Sakai
Takeo Yoshimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3941881A priority Critical patent/JPS57155366A/ja
Publication of JPS57155366A publication Critical patent/JPS57155366A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP3941881A 1981-03-20 1981-03-20 Apparatus for manufacturing semiconductor Pending JPS57155366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3941881A JPS57155366A (en) 1981-03-20 1981-03-20 Apparatus for manufacturing semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3941881A JPS57155366A (en) 1981-03-20 1981-03-20 Apparatus for manufacturing semiconductor

Publications (1)

Publication Number Publication Date
JPS57155366A true JPS57155366A (en) 1982-09-25

Family

ID=12552430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3941881A Pending JPS57155366A (en) 1981-03-20 1981-03-20 Apparatus for manufacturing semiconductor

Country Status (1)

Country Link
JP (1) JPS57155366A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5664504A (en) * 1994-10-27 1997-09-09 Kobayashi; Shizuo Combustion apparatus having inverse temperature distribution by forced convection
US20100269754A1 (en) * 2009-04-28 2010-10-28 Mitsubishi Materials Corporation Polycrystalline silicon reactor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5664504A (en) * 1994-10-27 1997-09-09 Kobayashi; Shizuo Combustion apparatus having inverse temperature distribution by forced convection
US20100269754A1 (en) * 2009-04-28 2010-10-28 Mitsubishi Materials Corporation Polycrystalline silicon reactor
US8540818B2 (en) * 2009-04-28 2013-09-24 Mitsubishi Materials Corporation Polycrystalline silicon reactor

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