JPS57155382A - Reactive spatter etching method - Google Patents
Reactive spatter etching methodInfo
- Publication number
- JPS57155382A JPS57155382A JP4218581A JP4218581A JPS57155382A JP S57155382 A JPS57155382 A JP S57155382A JP 4218581 A JP4218581 A JP 4218581A JP 4218581 A JP4218581 A JP 4218581A JP S57155382 A JPS57155382 A JP S57155382A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- sample
- etching
- etched
- fluorine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title 1
- 239000011347 resin Substances 0.000 abstract 6
- 229920005989 resin Polymers 0.000 abstract 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 3
- 229910052731 fluorine Inorganic materials 0.000 abstract 3
- 239000011737 fluorine Substances 0.000 abstract 3
- 239000004743 Polypropylene Substances 0.000 abstract 2
- -1 polypropylene Polymers 0.000 abstract 2
- 229920001155 polypropylene Polymers 0.000 abstract 2
- 238000003486 chemical etching Methods 0.000 abstract 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To enable etching work of high precision, by covering the surface of a target electrode with the sample to be etched and the specified resin at a certain ratio, when performing the reactive spatter etching using the fluorine type gas plasma.
CONSTITUTION: The surface of target electrode 11 in a vacuum apparatus is covered with a polypropylene resin sheet 12, the sample 14 to be etched is arranged on that and also a fluorine resin plate 13 is formed surrounding the sample 14. In this case the ratio of the exposing area of the fluorine resin 13 to the exposing area of polypropylene resin 12 is made 100:10W100. Because each resin for covering the target is formed in the shape of plate, high durability is provided, as well as the management of each electrode face is easy, and the etching work of high precision becomes possible by the spatter action and the chemical etching mechanism.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4218581A JPS57155382A (en) | 1981-03-23 | 1981-03-23 | Reactive spatter etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4218581A JPS57155382A (en) | 1981-03-23 | 1981-03-23 | Reactive spatter etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57155382A true JPS57155382A (en) | 1982-09-25 |
| JPS6339675B2 JPS6339675B2 (en) | 1988-08-05 |
Family
ID=12628939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4218581A Granted JPS57155382A (en) | 1981-03-23 | 1981-03-23 | Reactive spatter etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57155382A (en) |
-
1981
- 1981-03-23 JP JP4218581A patent/JPS57155382A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6339675B2 (en) | 1988-08-05 |
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