JPS57178376A - Junction type field-effect transistor - Google Patents

Junction type field-effect transistor

Info

Publication number
JPS57178376A
JPS57178376A JP56064905A JP6490581A JPS57178376A JP S57178376 A JPS57178376 A JP S57178376A JP 56064905 A JP56064905 A JP 56064905A JP 6490581 A JP6490581 A JP 6490581A JP S57178376 A JPS57178376 A JP S57178376A
Authority
JP
Japan
Prior art keywords
gate
film
source
mask
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56064905A
Other languages
Japanese (ja)
Inventor
Kenichi Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP56064905A priority Critical patent/JPS57178376A/en
Publication of JPS57178376A publication Critical patent/JPS57178376A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To shorten gate length, and to reduce resistance between a gate and a source by forming a gate electrode and an impurity region under the gate electrode by using the same mask while shaping operating layers between the gate and both the source and a drain by employing the gate electrode as a mask. CONSTITUTION:An N type GaAs operating layer 2 and N<+> regions 4, 5 are formed to a semi-insulating GaAs crystal 1, and an Si3N4 film 9 and a resist film 10 are shaped onto them. A window section is molded to the resist film 10, and the Si3N4 film 9 exposed is removed through etching. A P<+> region 3 is formed by implanting P type impurity ions while using the film 9, 10 as the masks, and metallic films 7, 11 are shaped by evaporating a metal having the high melting point under vacuum. The reist film 10 and the metallic film 11 are removed, N type impurity ions are implanted employing the gate metallic film 7 as the mask, and the operating layers 12, 13 between both the gate and the source and both the gate and the drain are formed.
JP56064905A 1981-04-27 1981-04-27 Junction type field-effect transistor Pending JPS57178376A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56064905A JPS57178376A (en) 1981-04-27 1981-04-27 Junction type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56064905A JPS57178376A (en) 1981-04-27 1981-04-27 Junction type field-effect transistor

Publications (1)

Publication Number Publication Date
JPS57178376A true JPS57178376A (en) 1982-11-02

Family

ID=13271536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56064905A Pending JPS57178376A (en) 1981-04-27 1981-04-27 Junction type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS57178376A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0195564A (en) * 1987-10-08 1989-04-13 Toshiba Corp Manufacture of semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5037381A (en) * 1973-08-06 1975-04-08
JPS50115782A (en) * 1974-02-22 1975-09-10
JPS5315081A (en) * 1976-07-27 1978-02-10 Nec Corp Junction type field effect transistor and its production
JPS5626474A (en) * 1979-08-13 1981-03-14 Hitachi Ltd Junction type field effect semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5037381A (en) * 1973-08-06 1975-04-08
JPS50115782A (en) * 1974-02-22 1975-09-10
JPS5315081A (en) * 1976-07-27 1978-02-10 Nec Corp Junction type field effect transistor and its production
JPS5626474A (en) * 1979-08-13 1981-03-14 Hitachi Ltd Junction type field effect semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0195564A (en) * 1987-10-08 1989-04-13 Toshiba Corp Manufacture of semiconductor device
US4895811A (en) * 1987-10-08 1990-01-23 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device

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