JPS57190349A - Manufacture of bipolar semiconductor device - Google Patents

Manufacture of bipolar semiconductor device

Info

Publication number
JPS57190349A
JPS57190349A JP56075186A JP7518681A JPS57190349A JP S57190349 A JPS57190349 A JP S57190349A JP 56075186 A JP56075186 A JP 56075186A JP 7518681 A JP7518681 A JP 7518681A JP S57190349 A JPS57190349 A JP S57190349A
Authority
JP
Japan
Prior art keywords
layer
type
films
sides
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56075186A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6242396B2 (2
Inventor
Shuichi Kameyama
Koichi Kanzaki
Yoshitaka Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56075186A priority Critical patent/JPS57190349A/ja
Priority to US06/378,480 priority patent/US4433470A/en
Publication of JPS57190349A publication Critical patent/JPS57190349A/ja
Publication of JPS6242396B2 publication Critical patent/JPS6242396B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0121—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56075186A 1981-05-19 1981-05-19 Manufacture of bipolar semiconductor device Granted JPS57190349A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56075186A JPS57190349A (en) 1981-05-19 1981-05-19 Manufacture of bipolar semiconductor device
US06/378,480 US4433470A (en) 1981-05-19 1982-05-14 Method for manufacturing semiconductor device utilizing selective etching and diffusion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56075186A JPS57190349A (en) 1981-05-19 1981-05-19 Manufacture of bipolar semiconductor device

Publications (2)

Publication Number Publication Date
JPS57190349A true JPS57190349A (en) 1982-11-22
JPS6242396B2 JPS6242396B2 (2) 1987-09-08

Family

ID=13568911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56075186A Granted JPS57190349A (en) 1981-05-19 1981-05-19 Manufacture of bipolar semiconductor device

Country Status (1)

Country Link
JP (1) JPS57190349A (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0239437A (ja) * 1988-07-28 1990-02-08 Toshiba Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0239437A (ja) * 1988-07-28 1990-02-08 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
JPS6242396B2 (2) 1987-09-08

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