JPS57190356A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS57190356A
JPS57190356A JP56075909A JP7590981A JPS57190356A JP S57190356 A JPS57190356 A JP S57190356A JP 56075909 A JP56075909 A JP 56075909A JP 7590981 A JP7590981 A JP 7590981A JP S57190356 A JPS57190356 A JP S57190356A
Authority
JP
Japan
Prior art keywords
emitters
base
comb
shape
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56075909A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0116020B2 (2
Inventor
Terumasa Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56075909A priority Critical patent/JPS57190356A/ja
Publication of JPS57190356A publication Critical patent/JPS57190356A/ja
Publication of JPH0116020B2 publication Critical patent/JPH0116020B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56075909A 1981-05-20 1981-05-20 Semiconductor integrated circuit device Granted JPS57190356A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56075909A JPS57190356A (en) 1981-05-20 1981-05-20 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56075909A JPS57190356A (en) 1981-05-20 1981-05-20 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS57190356A true JPS57190356A (en) 1982-11-22
JPH0116020B2 JPH0116020B2 (2) 1989-03-22

Family

ID=13589930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56075909A Granted JPS57190356A (en) 1981-05-20 1981-05-20 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57190356A (2)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS497389A (2) * 1972-05-10 1974-01-23

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS497389A (2) * 1972-05-10 1974-01-23

Also Published As

Publication number Publication date
JPH0116020B2 (2) 1989-03-22

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