JPS57192017A - Epitaxial growing method - Google Patents

Epitaxial growing method

Info

Publication number
JPS57192017A
JPS57192017A JP56077440A JP7744081A JPS57192017A JP S57192017 A JPS57192017 A JP S57192017A JP 56077440 A JP56077440 A JP 56077440A JP 7744081 A JP7744081 A JP 7744081A JP S57192017 A JPS57192017 A JP S57192017A
Authority
JP
Japan
Prior art keywords
layer
buried diffusion
diffusion layer
type
epitaxial growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56077440A
Other languages
Japanese (ja)
Inventor
Masao Sugita
Yuji Furumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56077440A priority Critical patent/JPS57192017A/en
Publication of JPS57192017A publication Critical patent/JPS57192017A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type

Abstract

PURPOSE:To reduce the extent of a buried diffusion layer by forming a not less than 0.5mum thick layer onto a semiconductor substrate, the surface thereof has the buried diffusion layer, through a decompression epitaxial growing method at 700-900 deg.C and shaping an epitaxial growing layer at said temperature or higher. CONSTITUTION:An n type silicon layer 4 is formed on the silicon base plate 3, piled on the surface of a p type substrate 1 thereof the n<+> type buried diffusion layer 2 is shaped, in not less than 0.5mum thickness through epitaxial growth at the temperature of 700-900 deg.C and the pressure of approximately 10 Torr. Impurity diffusion from the buried diffusion layer 2 and the quantity of an n type impurity evaporated from the surface of the buried diffusion layer 2 are reduced, and the extent in the upward direction and lateral direction of the layer 2 is decreased. An n type silicon layer 4' is shaped onto the layer 4 though normal epitaxial growth.
JP56077440A 1981-05-21 1981-05-21 Epitaxial growing method Pending JPS57192017A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56077440A JPS57192017A (en) 1981-05-21 1981-05-21 Epitaxial growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56077440A JPS57192017A (en) 1981-05-21 1981-05-21 Epitaxial growing method

Publications (1)

Publication Number Publication Date
JPS57192017A true JPS57192017A (en) 1982-11-26

Family

ID=13634079

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56077440A Pending JPS57192017A (en) 1981-05-21 1981-05-21 Epitaxial growing method

Country Status (1)

Country Link
JP (1) JPS57192017A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0196923A (en) * 1987-10-09 1989-04-14 Sony Corp Epitaxial growth method
WO2001035452A1 (en) * 1999-11-10 2001-05-17 Shin-Etsu Handotai Co., Ltd. Production method for silicon epitaxial wafer and silicon epitaxial wafer
JP2006210934A (en) * 2006-02-16 2006-08-10 Shin Etsu Handotai Co Ltd Manufacturing method of silicon epitaxial wafer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52110570A (en) * 1976-03-15 1977-09-16 Hitachi Ltd Forming method of silicon epitaxial layer
JPS5361273A (en) * 1976-11-12 1978-06-01 Nec Home Electronics Ltd Production of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52110570A (en) * 1976-03-15 1977-09-16 Hitachi Ltd Forming method of silicon epitaxial layer
JPS5361273A (en) * 1976-11-12 1978-06-01 Nec Home Electronics Ltd Production of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0196923A (en) * 1987-10-09 1989-04-14 Sony Corp Epitaxial growth method
WO2001035452A1 (en) * 1999-11-10 2001-05-17 Shin-Etsu Handotai Co., Ltd. Production method for silicon epitaxial wafer and silicon epitaxial wafer
US6589336B1 (en) 1999-11-10 2003-07-08 Shin-Etsu Handotai Co., Ltd. Production method for silicon epitaxial wafer and silicon epitaxial wafer
JP2006210934A (en) * 2006-02-16 2006-08-10 Shin Etsu Handotai Co Ltd Manufacturing method of silicon epitaxial wafer

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