JPS5719948A - Electron beam device - Google Patents

Electron beam device

Info

Publication number
JPS5719948A
JPS5719948A JP9440280A JP9440280A JPS5719948A JP S5719948 A JPS5719948 A JP S5719948A JP 9440280 A JP9440280 A JP 9440280A JP 9440280 A JP9440280 A JP 9440280A JP S5719948 A JPS5719948 A JP S5719948A
Authority
JP
Japan
Prior art keywords
electron
specimen
specific energy
detector
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9440280A
Other languages
Japanese (ja)
Inventor
Takeshi Tomita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd, Nihon Denshi KK filed Critical Jeol Ltd
Priority to JP9440280A priority Critical patent/JPS5719948A/en
Publication of JPS5719948A publication Critical patent/JPS5719948A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)

Abstract

PURPOSE:To indicate a specimen image based on the detection signal of the reflected electron in specific energy area by providing a detector for detecting only the reflected electron in specific energy area. CONSTITUTION:The electron beam 2 from an electron gun 1 is focused by a focusing lens 3 while irradiated onto a minute point on a specimen 5 by means of a field type objective lens 4. A signal is supplied from a scanning circuit 6 to a deflection coil 7 for the purpose to scan the electron beam irradiating point on the specimen 5. The electron reflected from the specimen while havng specific energy area is detected by a semiconductor detector 9 and the output signal from the detector 9 is provided through an amplifier 10 to the grid G of a cathode ray tube 8.
JP9440280A 1980-07-10 1980-07-10 Electron beam device Pending JPS5719948A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9440280A JPS5719948A (en) 1980-07-10 1980-07-10 Electron beam device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9440280A JPS5719948A (en) 1980-07-10 1980-07-10 Electron beam device

Publications (1)

Publication Number Publication Date
JPS5719948A true JPS5719948A (en) 1982-02-02

Family

ID=14109251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9440280A Pending JPS5719948A (en) 1980-07-10 1980-07-10 Electron beam device

Country Status (1)

Country Link
JP (1) JPS5719948A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03182039A (en) * 1989-12-04 1991-08-08 Internatl Business Mach Corp <Ibm> Magnetic filter system low loss scanning type electron microscope

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03182039A (en) * 1989-12-04 1991-08-08 Internatl Business Mach Corp <Ibm> Magnetic filter system low loss scanning type electron microscope

Similar Documents

Publication Publication Date Title
JP2602287B2 (en) X-ray mask defect inspection method and apparatus
US4814615A (en) Method and apparatus for detecting defect in circuit pattern of a mask for X-ray exposure
GB1444109A (en) Apparatus and method for generating x-rays
JPS5760205A (en) Exposure be electron beam
JPS5719948A (en) Electron beam device
JPS56150303A (en) Surface form measuring device using scan-type electronic microscope
JPS57210549A (en) Method of correction attendant on deflection
JPH01120749A (en) Automatic focusing device for electron microscope
JPS5613650A (en) Scanning type focusing electron-ray diffractor
JPS5671266A (en) Scanning electron microscope
JPS63119147A (en) Focus condition detecting device of changed corpuscular beams
JPS5732557A (en) Scan electron microscope
JPS564004A (en) System for detecting minute defects of body
JPS5912553A (en) Electron ray device
JPS6415604A (en) Measuring apparatus for length by electron beam
JPS62126334A (en) X-ray microscope
JPS6326925Y2 (en)
JPS56116260A (en) Scanning focusing electron beam diffracting device
JPS57135343A (en) Surface defect inspecting device
JPS55117388A (en) Scanning electronic microscope or its similar device
KR840000875B1 (en) Scanning electron microscope
JPS6342460Y2 (en)
JPH024442Y2 (en)
JPS56130921A (en) Adjusting method of axis of charged particle beam
JPS5780648A (en) Scanning image monitor