JPS57201027A - Dry etching method - Google Patents

Dry etching method

Info

Publication number
JPS57201027A
JPS57201027A JP56085643A JP8564381A JPS57201027A JP S57201027 A JPS57201027 A JP S57201027A JP 56085643 A JP56085643 A JP 56085643A JP 8564381 A JP8564381 A JP 8564381A JP S57201027 A JPS57201027 A JP S57201027A
Authority
JP
Japan
Prior art keywords
dry etching
etched
etching method
chf3
flat plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56085643A
Other languages
Japanese (ja)
Other versions
JPH0158654B2 (en
Inventor
Hiroshi Norimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP56085643A priority Critical patent/JPS57201027A/en
Publication of JPS57201027A publication Critical patent/JPS57201027A/en
Publication of JPH0158654B2 publication Critical patent/JPH0158654B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To reduce a damage in a dry etching method by placing a material to be etched on the grounding electrode of a parallel flat plate type dry etching device and employing as an etching gas a mixture of C2F6 and CHF3. CONSTITUTION:A silicon nitrided film 13 on a silicon substrate 12 is etched with a mask pattern 14. A material 11 to be etched is placed on a grounding electrode of a parallel flat plate type dry etching device (not shown), a mixture gas of C2F6 and CHF3 is used as an etching gas, pressure is set to the range of 0.1-1Torr. The film 13 is dry etched under this conditions.
JP56085643A 1981-06-05 1981-06-05 Dry etching method Granted JPS57201027A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56085643A JPS57201027A (en) 1981-06-05 1981-06-05 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56085643A JPS57201027A (en) 1981-06-05 1981-06-05 Dry etching method

Publications (2)

Publication Number Publication Date
JPS57201027A true JPS57201027A (en) 1982-12-09
JPH0158654B2 JPH0158654B2 (en) 1989-12-13

Family

ID=13864499

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56085643A Granted JPS57201027A (en) 1981-06-05 1981-06-05 Dry etching method

Country Status (1)

Country Link
JP (1) JPS57201027A (en)

Also Published As

Publication number Publication date
JPH0158654B2 (en) 1989-12-13

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