JPS57204173A - Method of forming gate insulator - Google Patents

Method of forming gate insulator

Info

Publication number
JPS57204173A
JPS57204173A JP57084096A JP8409682A JPS57204173A JP S57204173 A JPS57204173 A JP S57204173A JP 57084096 A JP57084096 A JP 57084096A JP 8409682 A JP8409682 A JP 8409682A JP S57204173 A JPS57204173 A JP S57204173A
Authority
JP
Japan
Prior art keywords
gate insulator
forming gate
forming
insulator
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57084096A
Other languages
English (en)
Japanese (ja)
Other versions
JPS626350B2 (2
Inventor
Gesuraa Buerunaa
Sutoruube Annerieze
Tsuruhaido Manfuretsudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS57204173A publication Critical patent/JPS57204173A/ja
Publication of JPS626350B2 publication Critical patent/JPS626350B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/0135—Making the insulator by deposition of a layer, e.g. metal, metal compound or polysilicon, followed by transformation thereof into the insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01346—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a gaseous ambient using an oxygen or a water vapour, e.g. oxidation through a layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
JP57084096A 1981-06-05 1982-05-20 Method of forming gate insulator Granted JPS57204173A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813122382 DE3122382A1 (de) 1981-06-05 1981-06-05 Verfahren zum herstellen einer gateisolations-schichtstruktur und die verwendung einer solchen struktur

Publications (2)

Publication Number Publication Date
JPS57204173A true JPS57204173A (en) 1982-12-14
JPS626350B2 JPS626350B2 (2) 1987-02-10

Family

ID=6134019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57084096A Granted JPS57204173A (en) 1981-06-05 1982-05-20 Method of forming gate insulator

Country Status (4)

Country Link
US (1) US4566173A (2)
EP (1) EP0066730B1 (2)
JP (1) JPS57204173A (2)
DE (2) DE3122382A1 (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007152927A (ja) * 2005-06-29 2007-06-21 Kokuyo Co Ltd ファイル、綴じ具、及び作動制限部材

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3628399A1 (de) * 1985-08-27 1987-03-05 Rca Corp Verfahren zum herstellen eines dielektrischen films auf einem halbleiterkoerper und danach hergestelltes halbleiterbauelement
US4804640A (en) * 1985-08-27 1989-02-14 General Electric Company Method of forming silicon and aluminum containing dielectric film and semiconductor device including said film
JPH036929U (2) * 1989-06-07 1991-01-23
US5254867A (en) * 1990-07-09 1993-10-19 Kabushiki Kaisha Toshiba Semiconductor devices having an improved gate
US5407850A (en) * 1993-06-29 1995-04-18 Digital Equipment Corporation SOI transistor threshold optimization by use of gate oxide having positive charge
US5387530A (en) * 1993-06-29 1995-02-07 Digital Equipment Corporation Threshold optimization for soi transistors through use of negative charge in the gate oxide
US6136728A (en) * 1996-01-05 2000-10-24 Yale University Water vapor annealing process
JP3250465B2 (ja) * 1996-09-06 2002-01-28 ヤマハ株式会社 電子シェーディングダメージの測定方法
US6245606B1 (en) * 1998-11-17 2001-06-12 Texas Instruments Incorporated Low temperature method for forming a thin, uniform layer of aluminum oxide
US6391724B1 (en) * 1999-12-24 2002-05-21 Hyundai Electronics Industries Co., Ltd. Method for manufacturing a gate structure incorporating aluminum oxide as a gate dielectric
KR100358056B1 (ko) * 1999-12-27 2002-10-25 주식회사 하이닉스반도체 반도체 소자의 게이트 산화막 형성방법
US6884295B2 (en) * 2000-05-29 2005-04-26 Tokyo Electron Limited Method of forming oxynitride film or the like and system for carrying out the same
US6858865B2 (en) 2001-02-23 2005-02-22 Micron Technology, Inc. Doped aluminum oxide dielectrics
US6743681B2 (en) * 2001-11-09 2004-06-01 Micron Technology, Inc. Methods of Fabricating Gate and Storage Dielectric Stacks having Silicon-Rich-Nitride
CA2525205C (en) * 2004-11-08 2013-06-25 Ecolab Inc. Foam cleaning and brightening composition, and methods
US7879739B2 (en) * 2006-05-09 2011-02-01 Intel Corporation Thin transition layer between a group III-V substrate and a high-k gate dielectric layer

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2722491A (en) * 1951-11-06 1955-11-01 Raytheon Mfg Co Insulating coating
NL97688C (2) * 1956-05-02
BE620911A (2) * 1961-08-04
GB1204544A (en) * 1966-09-02 1970-09-09 Hitachi Ltd Semiconductor device and method of manufacturing the same
US3502950A (en) * 1967-06-20 1970-03-24 Bell Telephone Labor Inc Gate structure for insulated gate field effect transistor
JPS4813268B1 (2) * 1968-10-09 1973-04-26
JPS4914390B1 (2) * 1969-10-29 1974-04-06
JPS5137151B2 (2) * 1971-09-08 1976-10-14
US4025669A (en) * 1973-11-15 1977-05-24 Owens-Illinois, Inc. Multiple pass method of applying printing paste upon a substrate
US3978577A (en) * 1975-06-30 1976-09-07 International Business Machines Corporation Fixed and variable threshold N-channel MNOSFET integration technique
US3974003A (en) * 1975-08-25 1976-08-10 Ibm Chemical vapor deposition of dielectric films containing Al, N, and Si
US4151537A (en) * 1976-03-10 1979-04-24 Gte Laboratories Incorporated Gate electrode for MNOS semiconductor memory device
US4115914A (en) * 1976-03-26 1978-09-26 Hughes Aircraft Company Electrically erasable non-volatile semiconductor memory
US4151538A (en) * 1978-01-30 1979-04-24 Rca Corp. Nonvolatile semiconductive memory device and method of its manufacture
US4244986A (en) * 1979-04-24 1981-01-13 Westinghouse Electric Corp. Method of forming sodium beta-Al2 O3 films and coatings
CA1164944A (en) * 1980-01-02 1984-04-03 International Gas Detectors Limited Gas sensor elements and methods of manufacturing them

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007152927A (ja) * 2005-06-29 2007-06-21 Kokuyo Co Ltd ファイル、綴じ具、及び作動制限部材

Also Published As

Publication number Publication date
DE3122382A1 (de) 1982-12-23
JPS626350B2 (2) 1987-02-10
DE3278524D1 (en) 1988-06-23
EP0066730A3 (en) 1983-08-03
EP0066730A2 (de) 1982-12-15
US4566173A (en) 1986-01-28
EP0066730B1 (de) 1988-05-18

Similar Documents

Publication Publication Date Title
JPS57196565A (en) Method of forming vertical fet
JPS57157572A (en) Method of producing transistor
JPS57145328A (en) Method of producing polysilicon structure
JPS57173957A (en) Method of forming dielectric isolation region
JPS57204173A (en) Method of forming gate insulator
JPS57178377A (en) Method of producing field effect transistor
JPS5745925A (en) Method of forming conductor
JPS57126011A (en) Insulator unit and method of producing same
JPS5575267A (en) Method of fabricating unstring gate vmosfet
GB2117416B (en) Method of quenching
GB2095740B (en) Method of building
JPS57169204A (en) Method of forming electrode
JPS57143803A (en) Method of forming resisotr
JPS57143207A (en) Method of producing segment conductor segment
JPS57124805A (en) Method of producing inorganic series insulator
JPS57806A (en) Method of forming wavy insulator
JPS554876A (en) Method of forming insulator
JPS57134805A (en) Method of connecting insulating material
JPS57141806A (en) Method of forming insulating film
JPS57115703A (en) Method of continuously producing inorganic series insulator
BG32649A1 (en) Method for obtaining of antibiotic tilozine
JPS57182974A (en) Method of producing electrode
JPS56149706A (en) Method of manufacturing inorganic mica insulator
JPS55163714A (en) Method of manufacturing vvring insulator
JPS57124804A (en) Method of producing inorganic molded insulator