JPS57210671A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57210671A
JPS57210671A JP56093763A JP9376381A JPS57210671A JP S57210671 A JPS57210671 A JP S57210671A JP 56093763 A JP56093763 A JP 56093763A JP 9376381 A JP9376381 A JP 9376381A JP S57210671 A JPS57210671 A JP S57210671A
Authority
JP
Japan
Prior art keywords
recess
film
covered
etching
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56093763A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0370385B2 (th
Inventor
Masamizu Konaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56093763A priority Critical patent/JPS57210671A/ja
Publication of JPS57210671A publication Critical patent/JPS57210671A/ja
Publication of JPH0370385B2 publication Critical patent/JPH0370385B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0148—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising introducing impurities in side walls or bottom walls of trenches, e.g. for forming channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Landscapes

  • Element Separation (AREA)
JP56093763A 1981-06-19 1981-06-19 Manufacture of semiconductor device Granted JPS57210671A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56093763A JPS57210671A (en) 1981-06-19 1981-06-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56093763A JPS57210671A (en) 1981-06-19 1981-06-19 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57210671A true JPS57210671A (en) 1982-12-24
JPH0370385B2 JPH0370385B2 (th) 1991-11-07

Family

ID=14091464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56093763A Granted JPS57210671A (en) 1981-06-19 1981-06-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57210671A (th)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59178773A (ja) * 1983-03-30 1984-10-11 Toshiba Corp 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59178773A (ja) * 1983-03-30 1984-10-11 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0370385B2 (th) 1991-11-07

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