JPS5723323A - Initial resetting circuit - Google Patents
Initial resetting circuitInfo
- Publication number
- JPS5723323A JPS5723323A JP9772480A JP9772480A JPS5723323A JP S5723323 A JPS5723323 A JP S5723323A JP 9772480 A JP9772480 A JP 9772480A JP 9772480 A JP9772480 A JP 9772480A JP S5723323 A JPS5723323 A JP S5723323A
- Authority
- JP
- Japan
- Prior art keywords
- vdd
- vss2
- turned
- electric power
- reset signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
- H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
Landscapes
- Electronic Switches (AREA)
Abstract
PURPOSE:To make an external capacitor for forming a reset signal unnecessary, by utilizing an internal boosting circuit and forming a reset signal in case when an electric power supply is turned on, in an MOS type integrated circuit incorporating a boosting circuit of supply voltage. CONSTITUTION:A supply voltage VDD-VSS1 system is boosted by two times to a VDD-VSS2 system through a boosting circuit 8. In this case, when an electric power supply is turned on, a time is required to some extent before boosted voltage develops in the VDD-VSS2 system, and during this period, an n channel MOSFET2 is off. On the other hand, a p channel MOSFET1 turns on as soon as the electric power supply is turned on, and a reset signal of a low level appears in a terminal 7. When boosted voltage develops in the VDD-VSS2 system, MOSFETs 1, 2 both turn on, and when an on-resistance of the MOSFET1 is made larger than an on-resistance of the MOSFET2, a voltage level of the terminal 7 becomes a high level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9772480A JPS5723323A (en) | 1980-07-17 | 1980-07-17 | Initial resetting circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9772480A JPS5723323A (en) | 1980-07-17 | 1980-07-17 | Initial resetting circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5723323A true JPS5723323A (en) | 1982-02-06 |
Family
ID=14199829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9772480A Pending JPS5723323A (en) | 1980-07-17 | 1980-07-17 | Initial resetting circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5723323A (en) |
-
1980
- 1980-07-17 JP JP9772480A patent/JPS5723323A/en active Pending
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