JPS5732676A - High power gaas field effect transistor - Google Patents

High power gaas field effect transistor

Info

Publication number
JPS5732676A
JPS5732676A JP10868380A JP10868380A JPS5732676A JP S5732676 A JPS5732676 A JP S5732676A JP 10868380 A JP10868380 A JP 10868380A JP 10868380 A JP10868380 A JP 10868380A JP S5732676 A JPS5732676 A JP S5732676A
Authority
JP
Japan
Prior art keywords
drain
parts
electrode
gate electrodes
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10868380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6241433B2 (2
Inventor
Masaaki Nakatani
Mutsuyuki Otsubo
Yasuro Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10868380A priority Critical patent/JPS5732676A/ja
Publication of JPS5732676A publication Critical patent/JPS5732676A/ja
Publication of JPS6241433B2 publication Critical patent/JPS6241433B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/681—Shapes or dispositions thereof comprising holes not having chips therein, e.g. for outgassing, underfilling or bond wire passage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/737—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a laterally-adjacent lead frame, conducting package substrate or heat sink

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP10868380A 1980-08-06 1980-08-06 High power gaas field effect transistor Granted JPS5732676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10868380A JPS5732676A (en) 1980-08-06 1980-08-06 High power gaas field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10868380A JPS5732676A (en) 1980-08-06 1980-08-06 High power gaas field effect transistor

Publications (2)

Publication Number Publication Date
JPS5732676A true JPS5732676A (en) 1982-02-22
JPS6241433B2 JPS6241433B2 (2) 1987-09-02

Family

ID=14491013

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10868380A Granted JPS5732676A (en) 1980-08-06 1980-08-06 High power gaas field effect transistor

Country Status (1)

Country Link
JP (1) JPS5732676A (2)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10220396A1 (de) * 2002-05-07 2003-11-27 Infineon Technologies Ag Halbleiterbauelementanordnung
US7026719B2 (en) * 2003-02-26 2006-04-11 Advanced Semiconductor Engineering, Inc. Semiconductor package with a heat spreader
EP0860024A4 (en) * 1995-11-08 2006-10-25 Endwave Corp CIRCUIT STRUCTURE WITH COUPLING-MOUNTED MATRIX OF COMPONENTS
CN102201449A (zh) * 2011-05-27 2011-09-28 电子科技大学 一种功率mos器件低热阻封装结构
CN104779212A (zh) * 2014-01-09 2015-07-15 英飞凌科技股份有限公司 半导体封装布置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0860024A4 (en) * 1995-11-08 2006-10-25 Endwave Corp CIRCUIT STRUCTURE WITH COUPLING-MOUNTED MATRIX OF COMPONENTS
EP0885457A4 (en) * 1995-11-08 2007-06-13 Endwave Corp METHOD FOR PRODUCING A CIRCUIT STRUCTURE WITH A CUSTOMIZED MATRIX OF COMPONENTS
DE10220396A1 (de) * 2002-05-07 2003-11-27 Infineon Technologies Ag Halbleiterbauelementanordnung
DE10220396B4 (de) * 2002-05-07 2007-08-23 Infineon Technologies Ag Leistungshalbleiterbauelementanordnung
US7026719B2 (en) * 2003-02-26 2006-04-11 Advanced Semiconductor Engineering, Inc. Semiconductor package with a heat spreader
CN102201449A (zh) * 2011-05-27 2011-09-28 电子科技大学 一种功率mos器件低热阻封装结构
CN104779212A (zh) * 2014-01-09 2015-07-15 英飞凌科技股份有限公司 半导体封装布置

Also Published As

Publication number Publication date
JPS6241433B2 (2) 1987-09-02

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