JPS573292A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS573292A
JPS573292A JP7798680A JP7798680A JPS573292A JP S573292 A JPS573292 A JP S573292A JP 7798680 A JP7798680 A JP 7798680A JP 7798680 A JP7798680 A JP 7798680A JP S573292 A JPS573292 A JP S573292A
Authority
JP
Japan
Prior art keywords
diode
junction
diffused
window
polysilicon diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7798680A
Other languages
Japanese (ja)
Inventor
Mitsuhiro Hamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7798680A priority Critical patent/JPS573292A/en
Publication of JPS573292A publication Critical patent/JPS573292A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain a highly reliable, high-writing-speed, and electrically writable semiconductor device, by using a polysilicon diode with p-n junction. CONSTITUTION:In the p region 3 of a stray-current preventive diode, a window is formed in an insulating film 2, and a polysilicon diode with p-n junction is formed covering the window with a diffused p type region 1' and the remaining part with a diffused n type region. As the reverse current of this polysilicon diode is increased, the diode characteristics change into resistance characteristics and information is written rapidly on a fuse basis according to a sudden rise in temperature due to the reverse current without fusing metal, and no residue generated in melting a metal, etc., owing to destruction inside of crystal near the p-n junction is generated, so that the reliability does not lower.
JP7798680A 1980-06-10 1980-06-10 Semiconductor storage device Pending JPS573292A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7798680A JPS573292A (en) 1980-06-10 1980-06-10 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7798680A JPS573292A (en) 1980-06-10 1980-06-10 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS573292A true JPS573292A (en) 1982-01-08

Family

ID=13649171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7798680A Pending JPS573292A (en) 1980-06-10 1980-06-10 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS573292A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001069658A3 (en) * 2000-03-13 2002-03-14 Philips Semiconductors Inc One-time programmable anti-fuse element and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001069658A3 (en) * 2000-03-13 2002-03-14 Philips Semiconductors Inc One-time programmable anti-fuse element and method

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