JPS5733709B2 - - Google Patents
Info
- Publication number
- JPS5733709B2 JPS5733709B2 JP1051574A JP1051574A JPS5733709B2 JP S5733709 B2 JPS5733709 B2 JP S5733709B2 JP 1051574 A JP1051574 A JP 1051574A JP 1051574 A JP1051574 A JP 1051574A JP S5733709 B2 JPS5733709 B2 JP S5733709B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1051574A JPS5733709B2 (it) | 1974-01-23 | 1974-01-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1051574A JPS5733709B2 (it) | 1974-01-23 | 1974-01-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS50105275A JPS50105275A (it) | 1975-08-19 |
| JPS5733709B2 true JPS5733709B2 (it) | 1982-07-19 |
Family
ID=11752347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1051574A Expired JPS5733709B2 (it) | 1974-01-23 | 1974-01-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5733709B2 (it) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4240843A (en) * | 1978-05-23 | 1980-12-23 | Western Electric Company, Inc. | Forming self-guarded p-n junctions by epitaxial regrowth of amorphous regions using selective radiation annealing |
| JPS5536940A (en) * | 1978-09-04 | 1980-03-14 | Nec Corp | Semiconductor device |
-
1974
- 1974-01-23 JP JP1051574A patent/JPS5733709B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS50105275A (it) | 1975-08-19 |