JPS573406A - Microwave semiconductor amplifier - Google Patents

Microwave semiconductor amplifier

Info

Publication number
JPS573406A
JPS573406A JP7687080A JP7687080A JPS573406A JP S573406 A JPS573406 A JP S573406A JP 7687080 A JP7687080 A JP 7687080A JP 7687080 A JP7687080 A JP 7687080A JP S573406 A JPS573406 A JP S573406A
Authority
JP
Japan
Prior art keywords
ridge
bias
waveguide
ridges
dielectric substance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7687080A
Other languages
Japanese (ja)
Inventor
Akio Saeki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7687080A priority Critical patent/JPS573406A/en
Publication of JPS573406A publication Critical patent/JPS573406A/en
Pending legal-status Critical Current

Links

Landscapes

  • Microwave Amplifiers (AREA)

Abstract

PURPOSE:To make unnecessary a DC blocking capacitor, by supplying a bias to a semiconductor element for a ridge, through the insertion of a dielectric substance plate between an inner wall of a waveguide and the ridge. CONSTITUTION:A signal inputted from a waveguide input terminal 6a is inputted to a base terminal of a transistor (TR)1 through a ridge 5a. The amplified signal passes through a ridge 5b and it is outputted from a waveguide output terminal 6b. Thin dielectric substance plates 8a, 8b are inserted between the ridges 5a, 5b and waveguides 10a, 10b and they are isolated against the DC bias, but in short circuit to signals in microwaves. A bias is applied to the TR1 through bias applying terminals 9a, 9b projected from the ridges 5a, 5b.
JP7687080A 1980-06-06 1980-06-06 Microwave semiconductor amplifier Pending JPS573406A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7687080A JPS573406A (en) 1980-06-06 1980-06-06 Microwave semiconductor amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7687080A JPS573406A (en) 1980-06-06 1980-06-06 Microwave semiconductor amplifier

Publications (1)

Publication Number Publication Date
JPS573406A true JPS573406A (en) 1982-01-08

Family

ID=13617668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7687080A Pending JPS573406A (en) 1980-06-06 1980-06-06 Microwave semiconductor amplifier

Country Status (1)

Country Link
JP (1) JPS573406A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760416U (en) * 1980-09-26 1982-04-09
JPS5760417U (en) * 1980-09-26 1982-04-09
JPS6162003U (en) * 1984-09-27 1986-04-26

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760416U (en) * 1980-09-26 1982-04-09
JPS5760417U (en) * 1980-09-26 1982-04-09
JPS6162003U (en) * 1984-09-27 1986-04-26

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