JPS5734374A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5734374A
JPS5734374A JP10993680A JP10993680A JPS5734374A JP S5734374 A JPS5734374 A JP S5734374A JP 10993680 A JP10993680 A JP 10993680A JP 10993680 A JP10993680 A JP 10993680A JP S5734374 A JPS5734374 A JP S5734374A
Authority
JP
Japan
Prior art keywords
film
fluorine
electrode
substrate
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10993680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6328345B2 (2
Inventor
Genshiro Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10993680A priority Critical patent/JPS5734374A/ja
Publication of JPS5734374A publication Critical patent/JPS5734374A/ja
Publication of JPS6328345B2 publication Critical patent/JPS6328345B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/60Schottky-barrier diodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP10993680A 1980-08-08 1980-08-08 Semiconductor device Granted JPS5734374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10993680A JPS5734374A (en) 1980-08-08 1980-08-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10993680A JPS5734374A (en) 1980-08-08 1980-08-08 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5734374A true JPS5734374A (en) 1982-02-24
JPS6328345B2 JPS6328345B2 (2) 1988-06-08

Family

ID=14522857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10993680A Granted JPS5734374A (en) 1980-08-08 1980-08-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5734374A (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59150480A (ja) * 1983-02-04 1984-08-28 Toshiba Corp 半導体圧力変換装置
JPS613470A (ja) * 1984-06-18 1986-01-09 Nec Corp 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068776A (2) * 1973-10-23 1975-06-09
JPS5645018A (en) * 1979-09-20 1981-04-24 Matsushita Electronics Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068776A (2) * 1973-10-23 1975-06-09
JPS5645018A (en) * 1979-09-20 1981-04-24 Matsushita Electronics Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59150480A (ja) * 1983-02-04 1984-08-28 Toshiba Corp 半導体圧力変換装置
JPS613470A (ja) * 1984-06-18 1986-01-09 Nec Corp 半導体装置

Also Published As

Publication number Publication date
JPS6328345B2 (2) 1988-06-08

Similar Documents

Publication Publication Date Title
JPS5623771A (en) Semiconductor memory
JPS5290273A (en) Semiconductor device
JPS5734374A (en) Semiconductor device
JPS562672A (en) Schottky barrier diode
JPS57130483A (en) Mis type photoelectric transducer
JPS5470776A (en) Semiconductor device and its manufacture
JPS56100486A (en) Photoelectric conversion element
JPS55117281A (en) 3[5 group compound semiconductor hetero structure mosfet
JPS5785266A (en) Zener diode
JPS5583253A (en) Semiconductor device
JPS57126172A (en) Schottky barrier diode
GB1271639A (en) Improvements in or relating to metal-semiconductor diodes
JPS5533075A (en) Mesa semiconductor device
JPS54141578A (en) Semiconductor device
JPS54154980A (en) Constant voltage diode
JPS5539636A (en) Composite semiconductor
JPS5588372A (en) Lateral type transistor
JPS54112189A (en) Mesa semiconductor device
JPS54106174A (en) Semiconductor device and its manufacture
JPS55162263A (en) Semiconductor device
JPS5649576A (en) Schottky diode
JPS54111793A (en) Semiconductor integrated circuit device and its manufacture
JPS5780765A (en) Semiconductor device
JPS55107259A (en) Power transistor
JPS5612779A (en) Zener diode