JPS5736887A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5736887A
JPS5736887A JP11217080A JP11217080A JPS5736887A JP S5736887 A JPS5736887 A JP S5736887A JP 11217080 A JP11217080 A JP 11217080A JP 11217080 A JP11217080 A JP 11217080A JP S5736887 A JPS5736887 A JP S5736887A
Authority
JP
Japan
Prior art keywords
electrode
irregular
semiconductor laser
current
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11217080A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6237899B2 (mo
Inventor
Yoshinobu Mihashi
Junichi Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP11217080A priority Critical patent/JPS5736887A/ja
Publication of JPS5736887A publication Critical patent/JPS5736887A/ja
Publication of JPS6237899B2 publication Critical patent/JPS6237899B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/106—Comprising an active region having a varying composition or cross-section in a specific direction varying thickness along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Head (AREA)
  • Semiconductor Lasers (AREA)
JP11217080A 1980-08-14 1980-08-14 Semiconductor laser Granted JPS5736887A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11217080A JPS5736887A (en) 1980-08-14 1980-08-14 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11217080A JPS5736887A (en) 1980-08-14 1980-08-14 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5736887A true JPS5736887A (en) 1982-02-27
JPS6237899B2 JPS6237899B2 (mo) 1987-08-14

Family

ID=14579993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11217080A Granted JPS5736887A (en) 1980-08-14 1980-08-14 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5736887A (mo)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS619846A (ja) * 1984-06-25 1986-01-17 Agency Of Ind Science & Technol 光ピツクアツプ
JPH02118927A (ja) * 1988-10-27 1990-05-07 Canon Inc 半導体レーザーの駆動方法及び半導体レーザーの駆動装置
US7005680B2 (en) 2000-11-01 2006-02-28 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device including a divided electrode having a plurality of spaced apart conductive members

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5727088A (en) * 1980-07-25 1982-02-13 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5727088A (en) * 1980-07-25 1982-02-13 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS619846A (ja) * 1984-06-25 1986-01-17 Agency Of Ind Science & Technol 光ピツクアツプ
JPH02118927A (ja) * 1988-10-27 1990-05-07 Canon Inc 半導体レーザーの駆動方法及び半導体レーザーの駆動装置
US7005680B2 (en) 2000-11-01 2006-02-28 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device including a divided electrode having a plurality of spaced apart conductive members

Also Published As

Publication number Publication date
JPS6237899B2 (mo) 1987-08-14

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