JPS573709A - Production of amorphous silicon film - Google Patents
Production of amorphous silicon filmInfo
- Publication number
- JPS573709A JPS573709A JP7479580A JP7479580A JPS573709A JP S573709 A JPS573709 A JP S573709A JP 7479580 A JP7479580 A JP 7479580A JP 7479580 A JP7479580 A JP 7479580A JP S573709 A JPS573709 A JP S573709A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- amorphous silicon
- silicon film
- compound
- silicon compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title abstract 4
- 150000003377 silicon compounds Chemical class 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 239000007789 gas Substances 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 238000007733 ion plating Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:In the ion-plating method, a silicon compound is admixed to the atmosphere gas to accelerate the growth rate of the amorphous silicon film, thus increasing the productivity and improving the characteristics. CONSTITUTION:After the vacuum vessel is vacuumed by sucking from the outlet 8 with a pump to the level of 10<-7> Torr, the base plate 3 of holder 2 is heated. Then, a mixture gas of a silicon compound such as SiH4 and hydrogen is fed from the pipe 9 into the vessel 1 and the vacuum is adjusted to the order of 10<-1>-10<-6> Torr. The silicon source 4 is evaporated by heating with electron beams or the like and ionized together with the gas mixture by the electrode 6 with a direct or alternating potential. The silicon compound also is decomposed and silicon is fed from both the silicon source and the compound to deposit on the base plate 3 to form the amorphous silicon film. Further, the similar process can be applied to the sputtering process to form the amorphous silicon film from the silicon compound in the atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7479580A JPS573709A (en) | 1980-06-02 | 1980-06-02 | Production of amorphous silicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7479580A JPS573709A (en) | 1980-06-02 | 1980-06-02 | Production of amorphous silicon film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS573709A true JPS573709A (en) | 1982-01-09 |
Family
ID=13557588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7479580A Pending JPS573709A (en) | 1980-06-02 | 1980-06-02 | Production of amorphous silicon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS573709A (en) |
-
1980
- 1980-06-02 JP JP7479580A patent/JPS573709A/en active Pending
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