JPS5740931A - Plasma processing device - Google Patents

Plasma processing device

Info

Publication number
JPS5740931A
JPS5740931A JP11664380A JP11664380A JPS5740931A JP S5740931 A JPS5740931 A JP S5740931A JP 11664380 A JP11664380 A JP 11664380A JP 11664380 A JP11664380 A JP 11664380A JP S5740931 A JPS5740931 A JP S5740931A
Authority
JP
Japan
Prior art keywords
wafer
gas
section
concaved
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11664380A
Other languages
Japanese (ja)
Other versions
JPH023294B2 (en
Inventor
Shuji Tabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11664380A priority Critical patent/JPS5740931A/en
Publication of JPS5740931A publication Critical patent/JPS5740931A/en
Publication of JPH023294B2 publication Critical patent/JPH023294B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To perform an etching on one side only of a wafer by a method wherein the jetting port of gas, which is sent from the lower side, is provided in the center of the wafter placing region on the upper surface of a sample stand, the jetting gas is passed through the reverse side of the wafer and forms a gas curtain which is going up between the circumferential fringe section of the wafer and the sample stand. CONSTITUTION:The sample stand 11 is fitted in such a manner that a gap 14 is provided between a disc-shaped base plate 12 having a concaved upper surface and a gas lead-in hole 13 provided in the center, and a sample placing plate 15 having the concaved surface. On the upper surface of the sample placing plate 15, a concaved section 16 having the depth equal to the thickness of the wafer 19 is provided and a flowing hole 17 which is interconnected to the gas lead-in hole 13 is provided in the center of the concaved section 16 through the intermediary of the gap 14. The gas jetted out from the lead-in hole 13 is flown to the reverse side of the wafer 19 passing through a flow hole 17 and forms a gas curtain in a gap section 18 located between the circumferential fringe section of the wafer 19 and the side wall of the concaved section 16. Through these procedures, a plasma etching can be performed on one side only of the wafer.
JP11664380A 1980-08-25 1980-08-25 Plasma processing device Granted JPS5740931A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11664380A JPS5740931A (en) 1980-08-25 1980-08-25 Plasma processing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11664380A JPS5740931A (en) 1980-08-25 1980-08-25 Plasma processing device

Publications (2)

Publication Number Publication Date
JPS5740931A true JPS5740931A (en) 1982-03-06
JPH023294B2 JPH023294B2 (en) 1990-01-23

Family

ID=14692281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11664380A Granted JPS5740931A (en) 1980-08-25 1980-08-25 Plasma processing device

Country Status (1)

Country Link
JP (1) JPS5740931A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61114127U (en) * 1984-12-27 1986-07-18
US4738748A (en) * 1983-09-30 1988-04-19 Fujitsu Limited Plasma processor and method for IC fabrication
US4893502A (en) * 1987-08-03 1990-01-16 Hitachi, Ltd. Angle sensor for throttle valve of internal combustion engine
JPH02110927A (en) * 1989-09-27 1990-04-24 Hitachi Ltd Sample holding method for vacuum processing equipment

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4738748A (en) * 1983-09-30 1988-04-19 Fujitsu Limited Plasma processor and method for IC fabrication
JPS61114127U (en) * 1984-12-27 1986-07-18
US4893502A (en) * 1987-08-03 1990-01-16 Hitachi, Ltd. Angle sensor for throttle valve of internal combustion engine
JPH02110927A (en) * 1989-09-27 1990-04-24 Hitachi Ltd Sample holding method for vacuum processing equipment

Also Published As

Publication number Publication date
JPH023294B2 (en) 1990-01-23

Similar Documents

Publication Publication Date Title
JPS6457637A (en) Method and apparatus for handling wafer
KR880001190A (en) Soldering method of integrated circuit package leads and apparatus therefor
KR900014772A (en) Fluid flow control method and apparatus for minimizing particle contamination
GB1525850A (en) Method and apparatus for chemically treating a single side of a workpiece
DE2965006D1 (en) Method for the selective detection of defects, caused by polishing, on the surface of silicon wafers
JPS5745232A (en) Device and method for developing
JPS57126967A (en) Method for holding mask for film formation
JPS5721826A (en) Manufacture of semiconductor single crystal wafer
JPS5458365A (en) Mask aligner
JPS57120672A (en) Plasma etching method
JPS56103424A (en) Plasma etching method
JPS5527623A (en) Semiconductor wafer dividing method
JPS5437581A (en) Wafer etching device
JPS57100734A (en) Etching method for semiconductor substrate
JPS6425539A (en) Wet treating apparatus
JPS5325350A (en) Dicing method of semiconductor substrates
JPS5667933A (en) Scribe method of semiconductor wafer
JPS6418230A (en) Manufacture of semiconductor device
JPS56152972A (en) Etching device
JPS6412532A (en) Cleaning device
JPS57121234A (en) Plasma processing and device thereof
FR2064138A1 (en) Semiconductor devices by etching
KR890008580Y1 (en) Testing of measuring during treatment of semiconductor device
JPS6415953A (en) Dry etching method
JPS5432267A (en) Liquid processing method for semiconductor wafer