JPS5740932A - Device for plasma processing - Google Patents

Device for plasma processing

Info

Publication number
JPS5740932A
JPS5740932A JP11739680A JP11739680A JPS5740932A JP S5740932 A JPS5740932 A JP S5740932A JP 11739680 A JP11739680 A JP 11739680A JP 11739680 A JP11739680 A JP 11739680A JP S5740932 A JPS5740932 A JP S5740932A
Authority
JP
Japan
Prior art keywords
plasma
approaching
density
holes
center part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11739680A
Other languages
Japanese (ja)
Inventor
Akira Mochizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11739680A priority Critical patent/JPS5740932A/en
Publication of JPS5740932A publication Critical patent/JPS5740932A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To change the flowing quantity of plasma as well as to perform a uniform and highly precise etching by a method wherein the density or size of the holes, to be provided at the electrode section of a plasma etching and processing device, are formed in such a manner that they are small in the center part and are becoming larger in proportion to approaching to the end section. CONSTITUTION:Plasma 6 is generated between aluminum electrodes by applying high frequency power 4 to perforated cylindrical electrodes 9 and 9' made of aluminum which are provided around the vacuum case having a gas lead-in port 2 and a gas exhausting port 3. The density of the holes to be provided on the electrode 9 is low in the vicinity of the center part of the supporting stand 7 of a substrate and becomes higher with approaching to both ends, thereby allowing to increase the quantity of the plasma 6. Through these procedures, a uniform plasma etching can be performed, the accuracy of the ethcing is increased and also a large quantity can be processed at a time.
JP11739680A 1980-08-26 1980-08-26 Device for plasma processing Pending JPS5740932A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11739680A JPS5740932A (en) 1980-08-26 1980-08-26 Device for plasma processing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11739680A JPS5740932A (en) 1980-08-26 1980-08-26 Device for plasma processing

Publications (1)

Publication Number Publication Date
JPS5740932A true JPS5740932A (en) 1982-03-06

Family

ID=14710607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11739680A Pending JPS5740932A (en) 1980-08-26 1980-08-26 Device for plasma processing

Country Status (1)

Country Link
JP (1) JPS5740932A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63306629A (en) * 1987-06-08 1988-12-14 Matsushita Electric Ind Co Ltd Apparatus and method of plasma processing
US5156703A (en) * 1987-03-18 1992-10-20 Hans Oechsner Mthod for the surface treatment of semiconductors by particle bombardment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5156703A (en) * 1987-03-18 1992-10-20 Hans Oechsner Mthod for the surface treatment of semiconductors by particle bombardment
JPS63306629A (en) * 1987-06-08 1988-12-14 Matsushita Electric Ind Co Ltd Apparatus and method of plasma processing

Similar Documents

Publication Publication Date Title
JPS56105482A (en) Plasma etching device
JPS5531154A (en) Plasma etching apparatus
JPS55124235A (en) Plasma generation method
JPS56105483A (en) Dry etching device
JPS5676242A (en) Treating apparatus using gas plasma reaction
JPS5512733A (en) Dry process etching device
JPS52127168A (en) Etching unit
JPS5650042A (en) Ion pump for super high vacuum
JPS57203781A (en) Plasma working device
JPS57210631A (en) Reactive type ion etching method
JPS5760073A (en) Plasma etching method
JPS6143427A (en) Sputter-etching method
JPS55101853A (en) Method of fabricating comparison electrode with fet
JPS57202733A (en) Dry etching device
JPS5732637A (en) Dry etching apparatus
JPS57131373A (en) Plasma etching device
JPS56158874A (en) Plasma etching method
JPS57141A (en) Method of improving dielectric characteristics of plasma- polymerized styrene membrane by electrical discharge treatment in hydrogen gas
JPS5480080A (en) Etching device
JPS53141182A (en) Plasma chemical vapor depositing device
JPS6484621A (en) Plasma processor
JPS52127770A (en) Spatter etching method
JPS5687671A (en) Dry etching apparatus
JPS57184224A (en) Microwave plasma treating method and its device
JPS5694746A (en) Plasma etching device