JPS5741367A - Chemical vapor deposition device - Google Patents

Chemical vapor deposition device

Info

Publication number
JPS5741367A
JPS5741367A JP11666380A JP11666380A JPS5741367A JP S5741367 A JPS5741367 A JP S5741367A JP 11666380 A JP11666380 A JP 11666380A JP 11666380 A JP11666380 A JP 11666380A JP S5741367 A JPS5741367 A JP S5741367A
Authority
JP
Japan
Prior art keywords
substrates
electrode
holes
vapor deposition
substrate stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11666380A
Other languages
Japanese (ja)
Inventor
Kanekata Takasaki
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11666380A priority Critical patent/JPS5741367A/en
Publication of JPS5741367A publication Critical patent/JPS5741367A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To make the easy uniformalization of the vapor deposited film thickness of substrates in one lot possible by hollowing the electrode in a hermetic vessel, and providing plural through-holes for ejection of reaction gases on the surface opposed to a substrate stage. CONSTITUTION:In a chemical vapor deposition device, multiple substrates 4 are placed on a substrate stage 3 incorporating a heater 5 therein, and the air in a hermetic vessel A is removed through a mother pipe 10. Next gaseous reactants such as SiH4 and O2, NH3 are introduced through the tubular handle 11 of an electrode E serving also as a gas ejector, and are ejected toward the lower substrates 4 through the multiple through-holes of a bottom plate 12 as shown in an arrow group (d). These gases are exhausted from the pipe 10 through plural exhaust pipes 6a, 6b. Plasma is generated between the electrode E and the substrates 4. Reacting gas molecules are activated by these plasams to cause vapor phase chemical reaction, whereby a thin film of uniform thickness is formed on the surfaces of the substrates 4 at relatively low temps.
JP11666380A 1980-08-25 1980-08-25 Chemical vapor deposition device Pending JPS5741367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11666380A JPS5741367A (en) 1980-08-25 1980-08-25 Chemical vapor deposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11666380A JPS5741367A (en) 1980-08-25 1980-08-25 Chemical vapor deposition device

Publications (1)

Publication Number Publication Date
JPS5741367A true JPS5741367A (en) 1982-03-08

Family

ID=14692807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11666380A Pending JPS5741367A (en) 1980-08-25 1980-08-25 Chemical vapor deposition device

Country Status (1)

Country Link
JP (1) JPS5741367A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61143579A (en) * 1984-12-14 1986-07-01 Nachi Fujikoshi Corp Method for feeding plasma ion
JPS6260871A (en) * 1985-09-11 1987-03-17 Anelva Corp Vacuum chemical reactor
JPS6362879A (en) * 1986-09-02 1988-03-19 Anelva Corp Vacuum chemical reactor
JPS6350878U (en) * 1986-09-22 1988-04-06
JPS63176710U (en) * 1986-11-26 1988-11-16
JPH05166734A (en) * 1991-12-13 1993-07-02 Mitsubishi Electric Corp Chemical vapor deposition method and chemical vapor deposition processing system and chemical vapor deposition apparatus therefor
KR100982984B1 (en) 2008-03-26 2010-09-17 삼성엘이디 주식회사 Chemical vapor deposition apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5391664A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Plasma cvd device
JPS5391665A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Plasma cvd device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5391664A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Plasma cvd device
JPS5391665A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Plasma cvd device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61143579A (en) * 1984-12-14 1986-07-01 Nachi Fujikoshi Corp Method for feeding plasma ion
JPS6260871A (en) * 1985-09-11 1987-03-17 Anelva Corp Vacuum chemical reactor
JPS6362879A (en) * 1986-09-02 1988-03-19 Anelva Corp Vacuum chemical reactor
JPS6350878U (en) * 1986-09-22 1988-04-06
JPS63176710U (en) * 1986-11-26 1988-11-16
JPH05166734A (en) * 1991-12-13 1993-07-02 Mitsubishi Electric Corp Chemical vapor deposition method and chemical vapor deposition processing system and chemical vapor deposition apparatus therefor
KR100982984B1 (en) 2008-03-26 2010-09-17 삼성엘이디 주식회사 Chemical vapor deposition apparatus

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