JPS574189A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS574189A
JPS574189A JP7859780A JP7859780A JPS574189A JP S574189 A JPS574189 A JP S574189A JP 7859780 A JP7859780 A JP 7859780A JP 7859780 A JP7859780 A JP 7859780A JP S574189 A JPS574189 A JP S574189A
Authority
JP
Japan
Prior art keywords
type
thickness
layer
grid
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7859780A
Other languages
Japanese (ja)
Inventor
Kazunari Oota
Masaru Kazumura
Haruyoshi Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7859780A priority Critical patent/JPS574189A/en
Publication of JPS574189A publication Critical patent/JPS574189A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enable laser oscillation in a 0.6mum band by a method wherein each layer material of a laser is constituted by In1-x-yGaxAlyP, and compositions are selected properly. CONSTITUTION:N type In0.45Ga0.15Al0.4P 13 with 2mum thickness, I type In0.45 Ga0.45Al0.1P 14 with 0.1mum thickness, P type In0.45Ga0.15Al0.4P 15 with 1mum thickness and P type GaAs 16 with 0.8mum thickness are grown continuously on an N type GaAs substrate 12. The compositions x, y are selected so as to satisfy 0<=x <=0.6, 0<=y<=0.5 and grid-matched with GaAs in the active layer 14, and grid- matched with the layer 14 in forbidden band width larger than the layer 14 and selected so as to satisfy 0<=x<=1, 0<=y<=1, 0<=x+y<=1 in the clad layers 13, 15. Trimethyl Ga, Al, In and PH3 are used, and H2S or diethyl zinc is added. The ratio of a mixed crystal and the concentration of impurities are controlled by selecting the flow rate of each gas. A reaction temperature is about 500 deg.C. According to this constitution, laser oscillating wavelength in 0.61mum is obtained at room temperature.
JP7859780A 1980-06-10 1980-06-10 Semiconductor laser device Pending JPS574189A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7859780A JPS574189A (en) 1980-06-10 1980-06-10 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7859780A JPS574189A (en) 1980-06-10 1980-06-10 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS574189A true JPS574189A (en) 1982-01-09

Family

ID=13666302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7859780A Pending JPS574189A (en) 1980-06-10 1980-06-10 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS574189A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61138156U (en) * 1985-02-18 1986-08-27
JPS6255985A (en) * 1985-09-05 1987-03-11 Nec Corp Semiconductor light emitting element
US4982409A (en) * 1988-09-09 1991-01-01 Kabushiki Kaisha Toshiba Semiconductor laser device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5429989A (en) * 1977-08-10 1979-03-06 Nec Corp Photo semiconductor integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5429989A (en) * 1977-08-10 1979-03-06 Nec Corp Photo semiconductor integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61138156U (en) * 1985-02-18 1986-08-27
JPS6255985A (en) * 1985-09-05 1987-03-11 Nec Corp Semiconductor light emitting element
US4982409A (en) * 1988-09-09 1991-01-01 Kabushiki Kaisha Toshiba Semiconductor laser device

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