JPS5743418A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5743418A JPS5743418A JP55119332A JP11933280A JPS5743418A JP S5743418 A JPS5743418 A JP S5743418A JP 55119332 A JP55119332 A JP 55119332A JP 11933280 A JP11933280 A JP 11933280A JP S5743418 A JPS5743418 A JP S5743418A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode material
- insulating layer
- electrode
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
Landscapes
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain an electrode structure having flattened surface by forming an insulating layer of approximately equal thickness to that of an electrode material so as to surround the electrode material formed on a silicon substrate. CONSTITUTION:An electrode material layer 22 is formed on a silicon substrate 21, and a polysilicon layer 23 is then formed on the layer 22. A resist pattern 24 is formed on the layer 23, and is then etched. Thereafter, the resist pattern 24 is removed. Subsequently, an SiOx is covered to form an insulating layer 25 of SiOx. Successively, the overall surface is etched, and smoothed flattened surfaces can be obtained on the insulating layer 25 and the electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55119332A JPS5743418A (en) | 1980-08-29 | 1980-08-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55119332A JPS5743418A (en) | 1980-08-29 | 1980-08-29 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5743418A true JPS5743418A (en) | 1982-03-11 |
| JPS6328335B2 JPS6328335B2 (en) | 1988-06-08 |
Family
ID=14758851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55119332A Granted JPS5743418A (en) | 1980-08-29 | 1980-08-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5743418A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5051257A (en) * | 1973-09-05 | 1975-05-08 |
-
1980
- 1980-08-29 JP JP55119332A patent/JPS5743418A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5051257A (en) * | 1973-09-05 | 1975-05-08 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6328335B2 (en) | 1988-06-08 |
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