JPS5745923A - Light diffusing method - Google Patents

Light diffusing method

Info

Publication number
JPS5745923A
JPS5745923A JP55122770A JP12277080A JPS5745923A JP S5745923 A JPS5745923 A JP S5745923A JP 55122770 A JP55122770 A JP 55122770A JP 12277080 A JP12277080 A JP 12277080A JP S5745923 A JPS5745923 A JP S5745923A
Authority
JP
Japan
Prior art keywords
wafer
light
jar
bell
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55122770A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP55122770A priority Critical patent/JPS5745923A/en
Publication of JPS5745923A publication Critical patent/JPS5745923A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H10P34/422—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing using incoherent radiation

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To enable the diffusion of a light at a low temperature in a short time by accelerating or controlling the diffusion by emitting simultaneously the light when gaseous impurity element is diffused on the surface of a semiconductor. CONSTITUTION:An Si wafer 2 and a jig 3 are contained in a bell-jar 1 made of quartz or the like, and gaseous impurity, e.g., PH3, B2H6, AsH5 or the like is filled in the bell-jar from one side. Then, a light from an Xe flash lamp 5 installed out of the bell-jar 1 is emitted to the surface of the wafer 2, simultaneously while heating the wafer 2 by a heater 4 to instantaneously heat the surface of the wafer 5 to high temperature, and the atmospheric gas thus degraded by light is diffused on the surface of the wafer 5. Thus, the diffusion can be performed at low temperature, e.g., 1,000-600 deg.C in a short time, e.g., 1-2min, thereby enhancing the efficiency and enabling the energy-saving.
JP55122770A 1980-09-04 1980-09-04 Light diffusing method Pending JPS5745923A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55122770A JPS5745923A (en) 1980-09-04 1980-09-04 Light diffusing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55122770A JPS5745923A (en) 1980-09-04 1980-09-04 Light diffusing method

Publications (1)

Publication Number Publication Date
JPS5745923A true JPS5745923A (en) 1982-03-16

Family

ID=14844176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55122770A Pending JPS5745923A (en) 1980-09-04 1980-09-04 Light diffusing method

Country Status (1)

Country Link
JP (1) JPS5745923A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60196936A (en) * 1984-03-21 1985-10-05 Seiko Epson Corp Manufacture of semiconductor device
US4618381A (en) * 1983-05-26 1986-10-21 Fuji Electric Corporate Research And Development Ltd. Method for adding impurities to semiconductor base material
JPH01241175A (en) * 1988-03-23 1989-09-26 Seikosha Co Ltd Manufacture of amolphous silicon thin film transistor
JPH02312A (en) * 1989-02-13 1990-01-05 Seiko Epson Corp Manufacture of semiconductor device
US5425392A (en) * 1993-05-26 1995-06-20 Micron Semiconductor, Inc. Method DRAM polycide rowline formation
US5716862A (en) * 1993-05-26 1998-02-10 Micron Technology, Inc. High performance PMOSFET using split-polysilicon CMOS process incorporating advanced stacked capacitior cells for fabricating multi-megabit DRAMS

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54131866A (en) * 1978-04-05 1979-10-13 Nippon Telegr & Teleph Corp <Ntt> Heat treatment device
JPS5552221A (en) * 1978-10-12 1980-04-16 Toshiba Corp Impurity dispersion method and its device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54131866A (en) * 1978-04-05 1979-10-13 Nippon Telegr & Teleph Corp <Ntt> Heat treatment device
JPS5552221A (en) * 1978-10-12 1980-04-16 Toshiba Corp Impurity dispersion method and its device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4618381A (en) * 1983-05-26 1986-10-21 Fuji Electric Corporate Research And Development Ltd. Method for adding impurities to semiconductor base material
JPS60196936A (en) * 1984-03-21 1985-10-05 Seiko Epson Corp Manufacture of semiconductor device
JPH01241175A (en) * 1988-03-23 1989-09-26 Seikosha Co Ltd Manufacture of amolphous silicon thin film transistor
JPH02312A (en) * 1989-02-13 1990-01-05 Seiko Epson Corp Manufacture of semiconductor device
US5425392A (en) * 1993-05-26 1995-06-20 Micron Semiconductor, Inc. Method DRAM polycide rowline formation
US5716862A (en) * 1993-05-26 1998-02-10 Micron Technology, Inc. High performance PMOSFET using split-polysilicon CMOS process incorporating advanced stacked capacitior cells for fabricating multi-megabit DRAMS

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