JPS5745933A - Heat treating method and device for semiconductor wafer - Google Patents

Heat treating method and device for semiconductor wafer

Info

Publication number
JPS5745933A
JPS5745933A JP55121501A JP12150180A JPS5745933A JP S5745933 A JPS5745933 A JP S5745933A JP 55121501 A JP55121501 A JP 55121501A JP 12150180 A JP12150180 A JP 12150180A JP S5745933 A JPS5745933 A JP S5745933A
Authority
JP
Japan
Prior art keywords
laser
hologram
wafer
optical system
reproduced image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55121501A
Other languages
Japanese (ja)
Inventor
Shogo Yoshikawa
Ryuji Tatsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55121501A priority Critical patent/JPS5745933A/en
Publication of JPS5745933A publication Critical patent/JPS5745933A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Lasers (AREA)

Abstract

PURPOSE:To simultaneously heat treat a plurality of specific parts of a semiconductor wafer by supporting the wafer at the position of a reproduced image by a laser beam emitted from a laser, an optical system and a hologram. CONSTITUTION:A laser light 13 is generated from a laser 11, a signal light 16 is formed through a mask 15 patterned at the specific parts via an optical system 12, and a hologram 18 including mask information is formed with a reference light 4 through a lens 17. When a laser beam is produced from a laser 21, a parallel reproduction illumination light 23 is formed via an optical system 22, is diffracted through a hologram 27, and a reproduced image is formed through a lens 28 on a wafer 25, the position and the shape of the image becomes the same as the mask used to form the hologram 18. When the beam intensity on the reproduced image is set at the energy adapted for the heat treatment of the wafer, the predetermined heat treatment effect can obtained, and wide range can be simultaneously heat treated without damage of the specific parts and other parts.
JP55121501A 1980-09-02 1980-09-02 Heat treating method and device for semiconductor wafer Pending JPS5745933A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55121501A JPS5745933A (en) 1980-09-02 1980-09-02 Heat treating method and device for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55121501A JPS5745933A (en) 1980-09-02 1980-09-02 Heat treating method and device for semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS5745933A true JPS5745933A (en) 1982-03-16

Family

ID=14812741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55121501A Pending JPS5745933A (en) 1980-09-02 1980-09-02 Heat treating method and device for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5745933A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4957845A (en) * 1972-09-30 1974-06-05
JPS53122441A (en) * 1977-03-31 1978-10-25 Canon Inc Real image observation method of total reflection hologram

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4957845A (en) * 1972-09-30 1974-06-05
JPS53122441A (en) * 1977-03-31 1978-10-25 Canon Inc Real image observation method of total reflection hologram

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