JPS5747873A - Plasma etching method - Google Patents
Plasma etching methodInfo
- Publication number
- JPS5747873A JPS5747873A JP12100680A JP12100680A JPS5747873A JP S5747873 A JPS5747873 A JP S5747873A JP 12100680 A JP12100680 A JP 12100680A JP 12100680 A JP12100680 A JP 12100680A JP S5747873 A JPS5747873 A JP S5747873A
- Authority
- JP
- Japan
- Prior art keywords
- vessel
- electrodes
- etching
- vacuum
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001020 plasma etching Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 abstract 2
- 239000004215 Carbon black (E152) Substances 0.000 abstract 1
- 150000008280 chlorinated hydrocarbons Chemical class 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229930195733 hydrocarbon Natural products 0.000 abstract 1
- 150000002430 hydrocarbons Chemical class 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Abstract
PURPOSE:To prevent the corrosion in an etching vessel and improve the uniformity of etching by affixing an org. film on the inside wall of a vacuum vessel and electrode surfaces in plasma etching of Al films. CONSTITUTION:An electric power source 8 is connected via an impedance matching box 9 via a vacuum seal 7 to the former of parallel flat plate electrodes 4, 5 insulated by insulators 6, 6' from a vacuum vessel 1, by which rf electric power is applied to both electrodes. Both electrodes are cooled by water cooling pipes 10, 10', and after the vessel 1 is evacuated to a prescribed degree of vacuum by an exhaust means 11, gaseous CCl4 and Cl2 are introduced through inlets 2, 3. The etching pressure of the vessel 1 is regulated by conductance valves 12, 12' sandwiching a liquid nitrogen trap 13, and gas plasma is formed between the electrodes 4, 5 by the electric glow discharge, whereby a sample 14 is etched. Here, the inside wall of the vessel 1 and the surfaces of the electrodes 4, 5 are coated with a hydrocarbon or chlorinated hydrocarbon type org. film 16.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12100680A JPS5747873A (en) | 1980-09-03 | 1980-09-03 | Plasma etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12100680A JPS5747873A (en) | 1980-09-03 | 1980-09-03 | Plasma etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5747873A true JPS5747873A (en) | 1982-03-18 |
Family
ID=14800448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12100680A Pending JPS5747873A (en) | 1980-09-03 | 1980-09-03 | Plasma etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5747873A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5989774A (en) * | 1982-11-10 | 1984-05-24 | Mitsubishi Electric Corp | Dry etching device |
| JPS60198821A (en) * | 1984-03-23 | 1985-10-08 | Anelva Corp | Dry etching device |
| JPS61130494A (en) * | 1984-11-29 | 1986-06-18 | Tokuda Seisakusho Ltd | Plasma etching device |
| JPS6276725A (en) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | Reactive plasma etching apparatus |
| JPH05304430A (en) * | 1992-04-24 | 1993-11-16 | Orion Denki Kk | Automatic adjusting circuit of analog control part |
| EP0700577A4 (en) * | 1993-05-28 | 1996-12-27 | Univ Tennessee Res Corp | METHOD AND APPARATUS FOR LUMINESCENT DISCHARGE PLASMA TREATMENT OF ATMOSPHERIC PRESSURE POLYMERIC MATERIALS |
-
1980
- 1980-09-03 JP JP12100680A patent/JPS5747873A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5989774A (en) * | 1982-11-10 | 1984-05-24 | Mitsubishi Electric Corp | Dry etching device |
| JPS60198821A (en) * | 1984-03-23 | 1985-10-08 | Anelva Corp | Dry etching device |
| JPS61130494A (en) * | 1984-11-29 | 1986-06-18 | Tokuda Seisakusho Ltd | Plasma etching device |
| JPS6276725A (en) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | Reactive plasma etching apparatus |
| JPH05304430A (en) * | 1992-04-24 | 1993-11-16 | Orion Denki Kk | Automatic adjusting circuit of analog control part |
| EP0700577A4 (en) * | 1993-05-28 | 1996-12-27 | Univ Tennessee Res Corp | METHOD AND APPARATUS FOR LUMINESCENT DISCHARGE PLASMA TREATMENT OF ATMOSPHERIC PRESSURE POLYMERIC MATERIALS |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4430547A (en) | Cleaning device for a plasma etching system | |
| US4339326A (en) | Surface processing apparatus utilizing microwave plasma | |
| KR100219873B1 (en) | Apparatus and method for plasma processing | |
| JPS57135442A (en) | Magnetic recording medium and its manufacture | |
| EP0327406A3 (en) | Plasma processing method and apparatus for the deposition of thin films | |
| KR910020193A (en) | Plasma etching apparatus and method for forming a conductive coating on the inner metal surface to protect the inner metal surface of the chamber from chemical corrosion | |
| JPS5747876A (en) | Plasma etching apparatus and method | |
| EP0841838B1 (en) | Plasma treatment apparatus and plasma treatment method | |
| JPS57131374A (en) | Plasma etching device | |
| GB994911A (en) | Improvements in or relating to sputtering apparatus | |
| JPS5713743A (en) | Plasma etching apparatus and etching method | |
| JPS5747873A (en) | Plasma etching method | |
| JPS5647572A (en) | Etching method of indium oxide film | |
| JPH06243994A (en) | Plasma processing device | |
| JPS55101853A (en) | Method of fabricating comparison electrode with fet | |
| JPS5647569A (en) | Plasma etching method | |
| JPS572585A (en) | Forming method for aluminum electrode | |
| JPS5629328A (en) | Plasma etching method | |
| JPS63221622A (en) | Dry-type thin film processing equipment | |
| JPS5710629A (en) | Plasma treatment of hollow body | |
| JPS57161057A (en) | Chemical vapor phase growth device using plasma | |
| JPS56100422A (en) | Plasma etching method | |
| JPS6299482A (en) | Dry etching method | |
| JPH0230126A (en) | Semiconductor manufacturing device | |
| JPS577129A (en) | Treating method and device for sputtering |