JPS57500628A - - Google Patents

Info

Publication number
JPS57500628A
JPS57500628A JP56501765A JP50176581A JPS57500628A JP S57500628 A JPS57500628 A JP S57500628A JP 56501765 A JP56501765 A JP 56501765A JP 50176581 A JP50176581 A JP 50176581A JP S57500628 A JPS57500628 A JP S57500628A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56501765A
Other versions
JPH0136275B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS57500628A publication Critical patent/JPS57500628A/ja
Publication of JPH0136275B2 publication Critical patent/JPH0136275B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/084—Ion implantation of compound devices

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP56501765A 1980-05-16 1981-05-11 Expired JPH0136275B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/150,460 US4318752A (en) 1980-05-16 1980-05-16 Heterojunction semiconductor laser fabrication utilizing laser radiation

Publications (2)

Publication Number Publication Date
JPS57500628A true JPS57500628A (ja) 1982-04-08
JPH0136275B2 JPH0136275B2 (ja) 1989-07-31

Family

ID=22534633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56501765A Expired JPH0136275B2 (ja) 1980-05-16 1981-05-11

Country Status (6)

Country Link
US (1) US4318752A (ja)
EP (1) EP0051669B1 (ja)
JP (1) JPH0136275B2 (ja)
DE (1) DE3176283D1 (ja)
GB (1) GB2076222B (ja)
WO (1) WO1981003399A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6422026A (en) * 1987-07-17 1989-01-25 Sony Corp Manufacture of semiconductor device

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4379727A (en) * 1981-07-08 1983-04-12 International Business Machines Corporation Method of laser annealing of subsurface ion implanted regions
US4810663A (en) * 1981-12-07 1989-03-07 Massachusetts Institute Of Technology Method of forming conductive path by low power laser pulse
US4542580A (en) * 1983-02-14 1985-09-24 Prime Computer, Inc. Method of fabricating n-type silicon regions and associated contacts
US4579600A (en) * 1983-06-17 1986-04-01 Texas Instruments Incorporated Method of making zero temperature coefficient of resistance resistors
US4555301A (en) * 1983-06-20 1985-11-26 At&T Bell Laboratories Formation of heterostructures by pulsed melting of precursor material
US4860296A (en) * 1983-12-30 1989-08-22 American Telephone And Telegraph Company, At&T Bell Laboratories Laser controlled by a multiple-layer heterostructure
US4496608A (en) * 1984-03-02 1985-01-29 Xerox Corporation P-Glass reflow technique
US4534804A (en) * 1984-06-14 1985-08-13 International Business Machines Corporation Laser process for forming identically positioned alignment marks on the opposite sides of a semiconductor wafer
US4650524A (en) * 1984-06-20 1987-03-17 Sanyo Electric Co., Ltd Method for dividing semiconductor film formed on a substrate into plural regions by backside energy beam irradiation
US4654090A (en) * 1985-09-13 1987-03-31 Xerox Corporation Selective disordering of well structures by laser annealing
USRE33274E (en) * 1985-09-13 1990-07-24 Xerox Corporation Selective disordering of well structures by laser annealing
EP0238694B1 (en) * 1986-03-27 1992-01-29 Ibm Deutschland Gmbh Method of forming identically positioned alignment marks on opposite sides of a semiconductor wafer
US4731338A (en) * 1986-10-09 1988-03-15 Amoco Corporation Method for selective intermixing of layered structures composed of thin solid films
US4865923A (en) * 1986-10-09 1989-09-12 Amoco Corporation Selective intermixing of layered structures composed of thin solid films
US4771010A (en) * 1986-11-21 1988-09-13 Xerox Corporation Energy beam induced layer disordering (EBILD)
GB2211210A (en) * 1987-10-16 1989-06-28 Philips Electronic Associated A method of modifying a surface of a body using electromagnetic radiation
DE3918094A1 (de) * 1989-06-02 1990-12-06 Aixtron Gmbh Verfahren zur herstellung von dotierten halbleiterschichten
JPH08222797A (ja) * 1995-01-17 1996-08-30 Hewlett Packard Co <Hp> 半導体装置およびその製造方法
US6040019A (en) * 1997-02-14 2000-03-21 Advanced Micro Devices, Inc. Method of selectively annealing damaged doped regions
US7015422B2 (en) * 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US6970644B2 (en) * 2000-12-21 2005-11-29 Mattson Technology, Inc. Heating configuration for use in thermal processing chambers
CN100463102C (zh) * 2004-11-23 2009-02-18 北京大学 GaN基外延层的大面积、低功率激光剥离方法
CN100505166C (zh) * 2006-12-19 2009-06-24 东莞市中镓半导体科技有限公司 在异质基底上制备高质量GaN单晶厚膜的方法
US7947599B2 (en) * 2008-01-23 2011-05-24 International Business Machines Corporation Laser annealing for 3-D chip integration

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6413441A (ja) * 1964-11-19 1966-05-20
FR2297143A1 (fr) * 1975-01-09 1976-08-06 Anvar Procede de realisation de microgravures par faisceau laser
JPS5814644B2 (ja) * 1975-05-14 1983-03-22 松下電器産業株式会社 ヒカリデンソウロノセイゾウホウホウ
US4138274A (en) * 1976-06-09 1979-02-06 Northern Telecom Limited Method of producing optoelectronic devices with control of light propagation by proton bombardment
GB1557072A (en) * 1976-10-13 1979-12-05 Standard Telephones Cables Ltd Stripe lears
US4176325A (en) * 1976-10-22 1979-11-27 Hitachi, Ltd. Semiconductor laser device
US4124824A (en) * 1977-01-31 1978-11-07 Motorola, Inc. Voltage subtractor for serial-parallel analog-to-digital converter
US4124826A (en) * 1977-03-01 1978-11-07 Bell Telephone Laboratories, Incorporated Current confinement in semiconductor lasers
US4154625A (en) * 1977-11-16 1979-05-15 Bell Telephone Laboratories, Incorporated Annealing of uncapped compound semiconductor materials by pulsed energy deposition
US4147563A (en) * 1978-08-09 1979-04-03 The United States Of America As Represented By The United States Department Of Energy Method for forming p-n junctions and solar-cells by laser-beam processing
US4181538A (en) * 1978-09-26 1980-01-01 The United States Of America As Represented By The United States Department Of Energy Method for making defect-free zone by laser-annealing of doped silicon
US4203781A (en) * 1978-12-27 1980-05-20 Bell Telephone Laboratories, Incorporated Laser deformation of semiconductor junctions
US4230505A (en) * 1979-10-09 1980-10-28 Rca Corporation Method of making an impatt diode utilizing a combination of epitaxial deposition, ion implantation and substrate removal
US4269631A (en) * 1980-01-14 1981-05-26 International Business Machines Corporation Selective epitaxy method using laser annealing for making filamentary transistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6422026A (en) * 1987-07-17 1989-01-25 Sony Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
DE3176283D1 (en) 1987-07-30
US4318752A (en) 1982-03-09
GB2076222A (en) 1981-11-25
EP0051669A1 (en) 1982-05-19
WO1981003399A1 (en) 1981-11-26
EP0051669A4 (en) 1985-07-30
JPH0136275B2 (ja) 1989-07-31
GB2076222B (en) 1983-12-21
EP0051669B1 (en) 1987-06-24

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