JPS5752128A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5752128A
JPS5752128A JP55127245A JP12724580A JPS5752128A JP S5752128 A JPS5752128 A JP S5752128A JP 55127245 A JP55127245 A JP 55127245A JP 12724580 A JP12724580 A JP 12724580A JP S5752128 A JPS5752128 A JP S5752128A
Authority
JP
Japan
Prior art keywords
substrate
ions
injected
diffusion
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55127245A
Other languages
Japanese (ja)
Other versions
JPS6255689B2 (en
Inventor
Koichi Inoue
Naohiro Monma
Osamu Saito
Hideo Honma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55127245A priority Critical patent/JPS5752128A/en
Publication of JPS5752128A publication Critical patent/JPS5752128A/en
Publication of JPS6255689B2 publication Critical patent/JPS6255689B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
    • H10P32/1406—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase by ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To perform a diffusion and particularly a selective diffusion of Al, Ga ions in an Si substrate accurately and inexpensively by injecting Al or Ga ions in the Si substrate from the surface of the substrate, coating an Si layer on the surface thereof, heat treating the same, and diffusing the Al, Ga ions in the prescribed depth in the substrate. CONSTITUTION:Al, or Ga ions are injected from one main surface of an Si substrate, and an Si layer is coated on the surface. The Si this coated is amorphous Si, and the thickness is higher than 1mum. The substrate is heated to activate the injected ions, and the ions are diffused in the prescribed depth, e.g., 0.02-0.05mum in the substrate. Accordingly, the Si layer coated newly prevents the external diffusion of the injected ions and also prevents the segregation of the injected ions in the surface of the substrate, thereby facilitating the selective diffusion.
JP55127245A 1980-09-16 1980-09-16 Manufacture of semiconductor device Granted JPS5752128A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55127245A JPS5752128A (en) 1980-09-16 1980-09-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55127245A JPS5752128A (en) 1980-09-16 1980-09-16 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5752128A true JPS5752128A (en) 1982-03-27
JPS6255689B2 JPS6255689B2 (en) 1987-11-20

Family

ID=14955284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55127245A Granted JPS5752128A (en) 1980-09-16 1980-09-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5752128A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109196622A (en) * 2016-05-31 2019-01-11 欧洲激光系统和解决方案公司 Deep junction electronic device and method of making the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109196622A (en) * 2016-05-31 2019-01-11 欧洲激光系统和解决方案公司 Deep junction electronic device and method of making the same
CN109196622B (en) * 2016-05-31 2024-04-02 欧洲激光系统和解决方案公司 Deep junction electronic device and method of manufacturing the same

Also Published As

Publication number Publication date
JPS6255689B2 (en) 1987-11-20

Similar Documents

Publication Publication Date Title
JPS5752128A (en) Manufacture of semiconductor device
JPS5688358A (en) Manufacture of semiconductor device
JPS55165640A (en) Manufacture of semiconductor device
JPS54141585A (en) Semiconductor integrated circuit device
JPS56115547A (en) Manufacture of semiconductor device
JPS5437690A (en) Manufacture for semiconductor device
JPS5420671A (en) Production of semiconductor devices
JPS5618419A (en) Manufacture of semiconductor device
JPS6450472A (en) Amorphous semiconductor solar cell
JPS5676538A (en) Formation of insulating film on semiconductor substrate
JPS57136349A (en) Semiconductor device
JPS55128828A (en) Manufacture of semiconductor device
JPS54149463A (en) Selective diffusion method aluminum
JPS57113233A (en) Manufacture of semiconductor device
JPS56120141A (en) Semiconductor device
JPS572516A (en) Manufacture of semiconductor device
JPS5769749A (en) Manufacture of semiconductor device
JPS5687317A (en) Manufacture of semiconductor device
JPS56122126A (en) Manufacture of semiconductor device
JPS57121274A (en) Forming method for p-n junction
JPS56130917A (en) Manufacture of semiconductor device
JPS5769733A (en) Heat treatment of semiconductor substrate
JPS55103736A (en) Hardening method of proving ink for semiconductor wafer
JPS5270762A (en) Electrode formation method of semiconductor element
JPS5795678A (en) Selenium semiconductor device and manufacturing method