JPS5753183A - Solid-state image pickup device - Google Patents

Solid-state image pickup device

Info

Publication number
JPS5753183A
JPS5753183A JP56078016A JP7801681A JPS5753183A JP S5753183 A JPS5753183 A JP S5753183A JP 56078016 A JP56078016 A JP 56078016A JP 7801681 A JP7801681 A JP 7801681A JP S5753183 A JPS5753183 A JP S5753183A
Authority
JP
Japan
Prior art keywords
potential
photodiode
charge
line
during
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56078016A
Other languages
Japanese (ja)
Inventor
Masaaki Nakai
Shinya Oba
Toshibumi Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56078016A priority Critical patent/JPS5753183A/en
Publication of JPS5753183A publication Critical patent/JPS5753183A/en
Pending legal-status Critical Current

Links

Classifications

    • H04N3/1568—

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To leave less signals unread through enhancing the strength of blooming suppression and extending the read time, by reading out signal charge to a CTD after clamping the potential of a photoelectric conversion element. CONSTITUTION:During the horizontal scanning period, a vertical gate line 54 is low-potential, and excessive charge overflowed from a photodiode is flowed into a vertical signal line 55 and is excluded to an external line BLDA. When the potential of the vertical gate line 55 becomes high-level during the horizontal fly-back time, an intensive light is irradiated, and the potential of the photodiode is clamped in a constant potential. After that, signal charge accumulated in the photodiode is transferred to the vertical signal line and is further transferred to a charge transfer element 59. During the horizontal scanning period, signals are read out from the charge transfer element 59 to the external successively.
JP56078016A 1981-05-25 1981-05-25 Solid-state image pickup device Pending JPS5753183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56078016A JPS5753183A (en) 1981-05-25 1981-05-25 Solid-state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56078016A JPS5753183A (en) 1981-05-25 1981-05-25 Solid-state image pickup device

Publications (1)

Publication Number Publication Date
JPS5753183A true JPS5753183A (en) 1982-03-30

Family

ID=13649992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56078016A Pending JPS5753183A (en) 1981-05-25 1981-05-25 Solid-state image pickup device

Country Status (1)

Country Link
JP (1) JPS5753183A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4562474A (en) * 1981-12-17 1985-12-31 Jun-ichi Nishizawa Semiconductor image sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4562474A (en) * 1981-12-17 1985-12-31 Jun-ichi Nishizawa Semiconductor image sensor
US4631592A (en) * 1981-12-17 1986-12-23 Fuji Photo Film Co., Ltd. Semiconductor image sensor

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