JPS5753585A - Thin film el element - Google Patents

Thin film el element

Info

Publication number
JPS5753585A
JPS5753585A JP55129758A JP12975880A JPS5753585A JP S5753585 A JPS5753585 A JP S5753585A JP 55129758 A JP55129758 A JP 55129758A JP 12975880 A JP12975880 A JP 12975880A JP S5753585 A JPS5753585 A JP S5753585A
Authority
JP
Japan
Prior art keywords
light generating
dielectric layer
prf
ions
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55129758A
Other languages
Japanese (ja)
Inventor
Takuro Yamashita
Toshio Inoguchi
Yoshinobu Kakihara
Masaru Yoshida
Koji Taniguchi
Koichi Tanaka
Toshiaki Miyajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP55129758A priority Critical patent/JPS5753585A/en
Publication of JPS5753585A publication Critical patent/JPS5753585A/en
Pending legal-status Critical Current

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  • Luminescent Compositions (AREA)

Abstract

PURPOSE: The titled element, containing PrF3 as an impurity for forming a light generating center in such a concentration as to give a specific sensing intensity ratio to Zn ions in a light generating layer consisting of a Zn compound, and capable of generating white light of very high brightness.
CONSTITUTION: A transparent electrode 2, e.g. In2O3, is formed on a glass base board 1, and a dielectric layer, e.g. SiO2, Y2O3 or Si3N4, is formed on the transparent electrode 2. ZnS:PrF3 is then deposited by electron beams on the resultant dielectric layer 3 as a light generating layer 4, and a dielectric layer 5, e.g. Si3N4, Al2O3 or Y2O3, is laminated on the light generating layer 4. Al is then deposited on the resultant dielectric layer 5 as a rear electrode 6, and an alternating voltage is applied across the electrodes 2 and 6 to generate light. The amount of PrF3 to be added to the base material for the light generating layer 4 is set at such a concentration as to give an IMA sensing intensity ratio between Pr ions and Zn ions of 1W15.
COPYRIGHT: (C)1982,JPO&Japio
JP55129758A 1980-09-17 1980-09-17 Thin film el element Pending JPS5753585A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55129758A JPS5753585A (en) 1980-09-17 1980-09-17 Thin film el element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55129758A JPS5753585A (en) 1980-09-17 1980-09-17 Thin film el element

Publications (1)

Publication Number Publication Date
JPS5753585A true JPS5753585A (en) 1982-03-30

Family

ID=15017461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55129758A Pending JPS5753585A (en) 1980-09-17 1980-09-17 Thin film el element

Country Status (1)

Country Link
JP (1) JPS5753585A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54127114A (en) * 1978-03-25 1979-10-02 Sanko Kinzoku Kougiyou Kk Roof
JPS5715399A (en) * 1980-07-03 1982-01-26 Matsushita Electric Industrial Co Ltd Electric field light emitting element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54127114A (en) * 1978-03-25 1979-10-02 Sanko Kinzoku Kougiyou Kk Roof
JPS5715399A (en) * 1980-07-03 1982-01-26 Matsushita Electric Industrial Co Ltd Electric field light emitting element

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