JPS575358A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS575358A
JPS575358A JP8000980A JP8000980A JPS575358A JP S575358 A JPS575358 A JP S575358A JP 8000980 A JP8000980 A JP 8000980A JP 8000980 A JP8000980 A JP 8000980A JP S575358 A JPS575358 A JP S575358A
Authority
JP
Japan
Prior art keywords
type
region
base region
leakage
preventing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8000980A
Other languages
Japanese (ja)
Inventor
Tadashi Kirisako
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8000980A priority Critical patent/JPS575358A/en
Publication of JPS575358A publication Critical patent/JPS575358A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To highly integrate a semiconductor device without adding a precise lithographic step in a bipolar transistor by improving the base region, thereby preventing the C-E leakage. CONSTITUTION:An n<+> type buried diffused layer 31' is formed in a p type silicon substrate 30, and an n type silicon epitaxial layer 31 is formed thereon. Thereafter, a p type base region 33, an n<+> type emitter region 34, a p<+> type base contact region 35, an n<+> type collector contact region 36 and buried oxidized film 32 are formed, and a transistor is thus formed. The part 39 of the p type base region extends deeply into the substrate as compared with the active part directly under the emitter region 34, and surrounds all the periphery of the emitter region 34. A thin relatively thin dioxidized silicon film 38 is formed on the surface of the base region 39. Thus, the distance between the end of the regions 34 and the 31 can be sufficiently increased, thereby preventing the C-E leakage.
JP8000980A 1980-06-13 1980-06-13 Semiconductor device and manufacture thereof Pending JPS575358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8000980A JPS575358A (en) 1980-06-13 1980-06-13 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8000980A JPS575358A (en) 1980-06-13 1980-06-13 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS575358A true JPS575358A (en) 1982-01-12

Family

ID=13706322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8000980A Pending JPS575358A (en) 1980-06-13 1980-06-13 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS575358A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS598350A (en) * 1982-07-06 1984-01-17 Nec Corp Semiconductor integrated circuit device
JPH01232692A (en) * 1988-03-11 1989-09-18 Nkk Corp Dc arc furnace for refining

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51114881A (en) * 1975-04-02 1976-10-08 Hitachi Ltd Semiconductor device manufacturing method
JPS538579A (en) * 1976-07-12 1978-01-26 Nec Corp Semiconductor device
JPS5571036A (en) * 1978-11-13 1980-05-28 Motorola Inc Method of manufacturing integrated circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51114881A (en) * 1975-04-02 1976-10-08 Hitachi Ltd Semiconductor device manufacturing method
JPS538579A (en) * 1976-07-12 1978-01-26 Nec Corp Semiconductor device
JPS5571036A (en) * 1978-11-13 1980-05-28 Motorola Inc Method of manufacturing integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS598350A (en) * 1982-07-06 1984-01-17 Nec Corp Semiconductor integrated circuit device
JPH01232692A (en) * 1988-03-11 1989-09-18 Nkk Corp Dc arc furnace for refining

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