JPS575361A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS575361A
JPS575361A JP7877680A JP7877680A JPS575361A JP S575361 A JPS575361 A JP S575361A JP 7877680 A JP7877680 A JP 7877680A JP 7877680 A JP7877680 A JP 7877680A JP S575361 A JPS575361 A JP S575361A
Authority
JP
Japan
Prior art keywords
transfer
charge
wells
substrate
stages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7877680A
Other languages
Japanese (ja)
Other versions
JPS618592B2 (en
Inventor
Hiroshige Goto
Koichi Sekine
Nobuo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7877680A priority Critical patent/JPS575361A/en
Publication of JPS575361A publication Critical patent/JPS575361A/en
Publication of JPS618592B2 publication Critical patent/JPS618592B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/474—Two-phase CCD

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To improve the operating speed of a charge transfer device and to enhance the transfer efficiency of the device by forming the depth of potential well induced under transfer of the CCD in three stages and sequentially deepening the depth of the well in the transfer direction. CONSTITUTION:An SiO2 film 11 and transfer electrodes 12-16 are formed on the surface of a P type silicon substrate 10. P<+> type semiconductor regions 17-21 are formed on the surface of the substrate directly under the electrode, and N<+> type semiconductor regions 22-26 are further formed. When clock pulses phi1, phi2 are supplied to the respective electrodes, the potential wells of three stages having different depths are inducted under the electrode, and the depths of the wells are sequentially deepened toward the charge trasfer direction. The acceleration caused by the fringe field effect caused by the signal charge is increased, and even if the operation speed is accelerated, high transfer efficiency can be obtained. The potential wells can also be formed by providing P<++>-P<+>-P region in the substrate.
JP7877680A 1980-06-11 1980-06-11 Charge transfer device Granted JPS575361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7877680A JPS575361A (en) 1980-06-11 1980-06-11 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7877680A JPS575361A (en) 1980-06-11 1980-06-11 Charge transfer device

Publications (2)

Publication Number Publication Date
JPS575361A true JPS575361A (en) 1982-01-12
JPS618592B2 JPS618592B2 (en) 1986-03-15

Family

ID=13671298

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7877680A Granted JPS575361A (en) 1980-06-11 1980-06-11 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS575361A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58180409U (en) * 1982-05-28 1983-12-02 ソニ−マグネスケ−ル株式会社 Measuring device
JPS6149472A (en) * 1984-08-17 1986-03-11 Matsushita Electronics Corp Charge transfer device
JPS6167963A (en) * 1984-09-11 1986-04-08 Sanyo Electric Co Ltd charge coupled device
JPS61184876A (en) * 1985-02-12 1986-08-18 Matsushita Electronics Corp charge transfer device
US5289022A (en) * 1991-05-14 1994-02-22 Sony Corporation CCD shift register having a plurality of storage regions and transfer regions therein
US7420603B2 (en) 2004-01-30 2008-09-02 Sony Corporation Solid-state image pickup device and module type solid-state image pickup device
US8925404B2 (en) 2009-12-30 2015-01-06 Robert Bosch Gmbh Starting device for an internal combustion engine

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01122497U (en) * 1988-02-05 1989-08-21

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58180409U (en) * 1982-05-28 1983-12-02 ソニ−マグネスケ−ル株式会社 Measuring device
JPS6149472A (en) * 1984-08-17 1986-03-11 Matsushita Electronics Corp Charge transfer device
JPS6167963A (en) * 1984-09-11 1986-04-08 Sanyo Electric Co Ltd charge coupled device
JPS61184876A (en) * 1985-02-12 1986-08-18 Matsushita Electronics Corp charge transfer device
US5289022A (en) * 1991-05-14 1994-02-22 Sony Corporation CCD shift register having a plurality of storage regions and transfer regions therein
US7420603B2 (en) 2004-01-30 2008-09-02 Sony Corporation Solid-state image pickup device and module type solid-state image pickup device
US8925404B2 (en) 2009-12-30 2015-01-06 Robert Bosch Gmbh Starting device for an internal combustion engine

Also Published As

Publication number Publication date
JPS618592B2 (en) 1986-03-15

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