JPS5759349A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5759349A JPS5759349A JP55134224A JP13422480A JPS5759349A JP S5759349 A JPS5759349 A JP S5759349A JP 55134224 A JP55134224 A JP 55134224A JP 13422480 A JP13422480 A JP 13422480A JP S5759349 A JPS5759349 A JP S5759349A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor element
- element regions
- silicon substrate
- insulating holding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/68—Organic materials, e.g. photoresists
- H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
- H10P14/6506—Formation of intermediate materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/021—Manufacture or treatment of air gaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/20—Air gaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/69—Insulating materials thereof
- H10W70/695—Organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07331—Connecting techniques
- H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
- H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
Landscapes
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55134224A JPS5759349A (en) | 1980-09-29 | 1980-09-29 | Manufacture of semiconductor device |
| US06/302,351 US4530001A (en) | 1980-09-29 | 1981-09-15 | High voltage integrated semiconductor devices using a thermoplastic resin layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55134224A JPS5759349A (en) | 1980-09-29 | 1980-09-29 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5759349A true JPS5759349A (en) | 1982-04-09 |
| JPS6351378B2 JPS6351378B2 (2) | 1988-10-13 |
Family
ID=15123316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55134224A Granted JPS5759349A (en) | 1980-09-29 | 1980-09-29 | Manufacture of semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4530001A (2) |
| JP (1) | JPS5759349A (2) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6437492U (2) * | 1987-08-31 | 1989-03-07 | ||
| JPH01256146A (ja) * | 1988-04-06 | 1989-10-12 | Sony Corp | 半導体装置 |
| US4904610A (en) * | 1988-01-27 | 1990-02-27 | General Instrument Corporation | Wafer level process for fabricating passivated semiconductor devices |
| JP2002523900A (ja) * | 1998-08-25 | 2002-07-30 | コミツサリア タ レネルジー アトミーク | 電子回路および基板中の少なくとも1つのパワー電子構成要素からなる集積電子回路の製造方法 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4866501A (en) * | 1985-12-16 | 1989-09-12 | American Telephone And Telegraph Company At&T Bell Laboratories | Wafer scale integration |
| US4793883A (en) * | 1986-07-14 | 1988-12-27 | National Starch And Chemical Corporation | Method of bonding a semiconductor chip to a substrate |
| US5191224A (en) * | 1987-04-22 | 1993-03-02 | Hitachi, Ltd. | Wafer scale of full wafer memory system, packaging method thereof, and wafer processing method employed therein |
| GB2206445A (en) * | 1987-07-01 | 1989-01-05 | Spectrol Reliance Ltd | Method of manufacturing dielectrically isolated integrated circuits and circuit elements |
| US4918505A (en) * | 1988-07-19 | 1990-04-17 | Tektronix, Inc. | Method of treating an integrated circuit to provide a temperature sensor that is integral therewith |
| US4871921A (en) * | 1988-08-09 | 1989-10-03 | Honeywell Inc. | Detector array assembly having bonding means joining first and second surfaces except where detectors are disposed |
| US6262434B1 (en) * | 1996-08-23 | 2001-07-17 | California Micro Devices Corporation | Integrated circuit structures and methods to facilitate accurate measurement of the IC devices |
| JP2003518771A (ja) * | 1999-12-24 | 2003-06-10 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | シリコンウェーハの埋め込み絶縁層上に配置されたトップ層に形成された半導体素子を有する半導体デバイスを製造する方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3475664A (en) * | 1965-06-30 | 1969-10-28 | Texas Instruments Inc | Ambient atmosphere isolated semiconductor devices |
| US3416224A (en) * | 1966-03-08 | 1968-12-17 | Ibm | Integrated semiconductor devices and fabrication methods therefor |
| US4296428A (en) * | 1979-06-28 | 1981-10-20 | Rockwell International Corporation | Merged field effect transistor circuit and fabrication process |
-
1980
- 1980-09-29 JP JP55134224A patent/JPS5759349A/ja active Granted
-
1981
- 1981-09-15 US US06/302,351 patent/US4530001A/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6437492U (2) * | 1987-08-31 | 1989-03-07 | ||
| US4904610A (en) * | 1988-01-27 | 1990-02-27 | General Instrument Corporation | Wafer level process for fabricating passivated semiconductor devices |
| JPH01256146A (ja) * | 1988-04-06 | 1989-10-12 | Sony Corp | 半導体装置 |
| JP2002523900A (ja) * | 1998-08-25 | 2002-07-30 | コミツサリア タ レネルジー アトミーク | 電子回路および基板中の少なくとも1つのパワー電子構成要素からなる集積電子回路の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6351378B2 (2) | 1988-10-13 |
| US4530001A (en) | 1985-07-16 |
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