JPS5759349A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5759349A
JPS5759349A JP55134224A JP13422480A JPS5759349A JP S5759349 A JPS5759349 A JP S5759349A JP 55134224 A JP55134224 A JP 55134224A JP 13422480 A JP13422480 A JP 13422480A JP S5759349 A JPS5759349 A JP S5759349A
Authority
JP
Japan
Prior art keywords
substrate
semiconductor element
element regions
silicon substrate
insulating holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55134224A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6351378B2 (2
Inventor
Haruo Mori
Yasuo Ono
Yutaka Oota
Hiroshi Tanabe
Kotaro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Oki Electric Industry Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55134224A priority Critical patent/JPS5759349A/ja
Priority to US06/302,351 priority patent/US4530001A/en
Publication of JPS5759349A publication Critical patent/JPS5759349A/ja
Publication of JPS6351378B2 publication Critical patent/JPS6351378B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68Organic materials, e.g. photoresists
    • H10P14/683Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6506Formation of intermediate materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69Inorganic materials
    • H10P14/692Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/021Manufacture or treatment of air gaps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20Air gaps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69Insulating materials thereof
    • H10W70/695Organic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • H10W72/07337Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/353Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers

Landscapes

  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
JP55134224A 1980-09-29 1980-09-29 Manufacture of semiconductor device Granted JPS5759349A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP55134224A JPS5759349A (en) 1980-09-29 1980-09-29 Manufacture of semiconductor device
US06/302,351 US4530001A (en) 1980-09-29 1981-09-15 High voltage integrated semiconductor devices using a thermoplastic resin layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55134224A JPS5759349A (en) 1980-09-29 1980-09-29 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5759349A true JPS5759349A (en) 1982-04-09
JPS6351378B2 JPS6351378B2 (2) 1988-10-13

Family

ID=15123316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55134224A Granted JPS5759349A (en) 1980-09-29 1980-09-29 Manufacture of semiconductor device

Country Status (2)

Country Link
US (1) US4530001A (2)
JP (1) JPS5759349A (2)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6437492U (2) * 1987-08-31 1989-03-07
JPH01256146A (ja) * 1988-04-06 1989-10-12 Sony Corp 半導体装置
US4904610A (en) * 1988-01-27 1990-02-27 General Instrument Corporation Wafer level process for fabricating passivated semiconductor devices
JP2002523900A (ja) * 1998-08-25 2002-07-30 コミツサリア タ レネルジー アトミーク 電子回路および基板中の少なくとも1つのパワー電子構成要素からなる集積電子回路の製造方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4866501A (en) * 1985-12-16 1989-09-12 American Telephone And Telegraph Company At&T Bell Laboratories Wafer scale integration
US4793883A (en) * 1986-07-14 1988-12-27 National Starch And Chemical Corporation Method of bonding a semiconductor chip to a substrate
US5191224A (en) * 1987-04-22 1993-03-02 Hitachi, Ltd. Wafer scale of full wafer memory system, packaging method thereof, and wafer processing method employed therein
GB2206445A (en) * 1987-07-01 1989-01-05 Spectrol Reliance Ltd Method of manufacturing dielectrically isolated integrated circuits and circuit elements
US4918505A (en) * 1988-07-19 1990-04-17 Tektronix, Inc. Method of treating an integrated circuit to provide a temperature sensor that is integral therewith
US4871921A (en) * 1988-08-09 1989-10-03 Honeywell Inc. Detector array assembly having bonding means joining first and second surfaces except where detectors are disposed
US6262434B1 (en) * 1996-08-23 2001-07-17 California Micro Devices Corporation Integrated circuit structures and methods to facilitate accurate measurement of the IC devices
JP2003518771A (ja) * 1999-12-24 2003-06-10 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ シリコンウェーハの埋め込み絶縁層上に配置されたトップ層に形成された半導体素子を有する半導体デバイスを製造する方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475664A (en) * 1965-06-30 1969-10-28 Texas Instruments Inc Ambient atmosphere isolated semiconductor devices
US3416224A (en) * 1966-03-08 1968-12-17 Ibm Integrated semiconductor devices and fabrication methods therefor
US4296428A (en) * 1979-06-28 1981-10-20 Rockwell International Corporation Merged field effect transistor circuit and fabrication process

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6437492U (2) * 1987-08-31 1989-03-07
US4904610A (en) * 1988-01-27 1990-02-27 General Instrument Corporation Wafer level process for fabricating passivated semiconductor devices
JPH01256146A (ja) * 1988-04-06 1989-10-12 Sony Corp 半導体装置
JP2002523900A (ja) * 1998-08-25 2002-07-30 コミツサリア タ レネルジー アトミーク 電子回路および基板中の少なくとも1つのパワー電子構成要素からなる集積電子回路の製造方法

Also Published As

Publication number Publication date
JPS6351378B2 (2) 1988-10-13
US4530001A (en) 1985-07-16

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