JPS5759384A - Manufacture of longitudinal type insulated field effect semiconductor device - Google Patents

Manufacture of longitudinal type insulated field effect semiconductor device

Info

Publication number
JPS5759384A
JPS5759384A JP55134431A JP13443180A JPS5759384A JP S5759384 A JPS5759384 A JP S5759384A JP 55134431 A JP55134431 A JP 55134431A JP 13443180 A JP13443180 A JP 13443180A JP S5759384 A JPS5759384 A JP S5759384A
Authority
JP
Japan
Prior art keywords
gate electrode
mask
implanted
region
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55134431A
Other languages
Japanese (ja)
Inventor
Hideshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55134431A priority Critical patent/JPS5759384A/en
Publication of JPS5759384A publication Critical patent/JPS5759384A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 

Abstract

PURPOSE:To reduce a chip by introducing a one conductive type impurities with a part of a gate electrode provided on a semiconductor substrate as a mask, then introducing reverse conductive type impurities with a part of the same gate electrode as a mask. CONSTITUTION:An n<-> type epitaxial layer 2 is provided on the n<+> type Si substrate 1. The gate electrode 7 is provided via a gate oxide film 6. A central part is covered by a photoresist layer. Then B is implanted with the gate electrode as a mask. A channel region 4 is formed by heat treatment. Then the photoresist is removed, and P is implanted with the gate electrode as a mask again (13 is the implanted region). A source and drain region is formed by heat treatment. In this method, sicne the entire semiconductor region can be formed in a self-aligning mode, the gate length and the channel length can be shortened, and the input capacity can be reduced.
JP55134431A 1980-09-29 1980-09-29 Manufacture of longitudinal type insulated field effect semiconductor device Pending JPS5759384A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55134431A JPS5759384A (en) 1980-09-29 1980-09-29 Manufacture of longitudinal type insulated field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55134431A JPS5759384A (en) 1980-09-29 1980-09-29 Manufacture of longitudinal type insulated field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS5759384A true JPS5759384A (en) 1982-04-09

Family

ID=15128212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55134431A Pending JPS5759384A (en) 1980-09-29 1980-09-29 Manufacture of longitudinal type insulated field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5759384A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103361A (en) * 1980-10-29 1982-06-26 Siemens Ag Mis controlled semiconductor element
JPS59219965A (en) * 1983-05-30 1984-12-11 Matsushita Electric Ind Co Ltd Metal oxide semiconductor type field-effect transistor
JPS601839U (en) * 1983-06-17 1985-01-09 渡辺　勝太 Scaffold support temporary rotating bracket for wall work
JP2005252157A (en) * 2004-03-08 2005-09-15 Mitsubishi Electric Corp Semiconductor device and manufacturing method thereof
JP2006303323A (en) * 2005-04-22 2006-11-02 Rohm Co Ltd Semiconductor device and manufacturing method thereof
WO2010044226A1 (en) * 2008-10-17 2010-04-22 パナソニック株式会社 Semiconductor device and method for manufacturing same
JP2012156544A (en) * 2012-04-11 2012-08-16 Rohm Co Ltd Semiconductor device and method for manufacturing the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103361A (en) * 1980-10-29 1982-06-26 Siemens Ag Mis controlled semiconductor element
JPS59219965A (en) * 1983-05-30 1984-12-11 Matsushita Electric Ind Co Ltd Metal oxide semiconductor type field-effect transistor
JPS601839U (en) * 1983-06-17 1985-01-09 渡辺　勝太 Scaffold support temporary rotating bracket for wall work
JP2005252157A (en) * 2004-03-08 2005-09-15 Mitsubishi Electric Corp Semiconductor device and manufacturing method thereof
JP2006303323A (en) * 2005-04-22 2006-11-02 Rohm Co Ltd Semiconductor device and manufacturing method thereof
WO2010044226A1 (en) * 2008-10-17 2010-04-22 パナソニック株式会社 Semiconductor device and method for manufacturing same
CN102187463A (en) * 2008-10-17 2011-09-14 松下电器产业株式会社 Semiconductor device and method for manufacturing same
JP2012156544A (en) * 2012-04-11 2012-08-16 Rohm Co Ltd Semiconductor device and method for manufacturing the same

Similar Documents

Publication Publication Date Title
JPS55160457A (en) Semiconductor device
JPS5688354A (en) Semiconductor integrated circuit device
JPS5759384A (en) Manufacture of longitudinal type insulated field effect semiconductor device
JPS57192063A (en) Manufacture of semiconductor device
JPS54109785A (en) Semiconductor device
JPS5565455A (en) Manufacture of semiconductor device
JPS5563873A (en) Semiconductor integrated circuit
JPS6433970A (en) Field effect semiconductor device
JPS5448179A (en) Mis-type semiconductor integrated circuit device
JPS56126977A (en) Junction type field effect transistor
JPS57128957A (en) Semiconductor integrated circuit device and manufacture thereof
JPS5376771A (en) Insulated gate type field effect transistor
JPS54117691A (en) Production of insulating gate-type semiconductor device
JPS57164573A (en) Semiconductor device
JPS56104470A (en) Semiconductor device and manufacture thereof
JPS5740973A (en) Inverter circuit and manufacture therefor
JPS5736863A (en) Manufacture of semiconductor device
JPS55108773A (en) Insulating gate type field effect transistor
JPS6461059A (en) Semiconductor device
JPS57145372A (en) Manufacture of semiconductor device
JPS5762567A (en) Manufacture of mos type semiconductor device
JPS5346287A (en) Production of semiconductor integrated circuit
JPS5685866A (en) Mos semiconductor device and manufacture thereof
JPS56150867A (en) Semiconductor device
JPS54114983A (en) Semiconductor device