JPS5760331A - Developing method for electron beam resist - Google Patents

Developing method for electron beam resist

Info

Publication number
JPS5760331A
JPS5760331A JP55134900A JP13490080A JPS5760331A JP S5760331 A JPS5760331 A JP S5760331A JP 55134900 A JP55134900 A JP 55134900A JP 13490080 A JP13490080 A JP 13490080A JP S5760331 A JPS5760331 A JP S5760331A
Authority
JP
Japan
Prior art keywords
electron beam
developing
solns
polymethyl methacrylate
beam resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55134900A
Other languages
Japanese (ja)
Inventor
Katsumi Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55134900A priority Critical patent/JPS5760331A/en
Publication of JPS5760331A publication Critical patent/JPS5760331A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To improve sensitivity and perform developing treatment free from wear of the film by developing the electron beam resist consisting of polymethyl methacrylate with mixed solns. of isopropyl alcohol and nitromethane. CONSTITUTION:The electron beam resist prepd. by dissolving polymethyl methacrylate in a solvent is coated on a substrate and is subjected to heat treatment, after which it is subjected to electron beam exposure. Thence, this is developed by using a developing solns. consisting of mixed solns. of isopropyl alcohol and nitromethane. Thereby, the sensitivity is made 2-3 times higher than that when commonly used high energy developing solns. are used, and polymethyl methacrylate is usable as resist of high practicability in semiconductor industry.
JP55134900A 1980-09-27 1980-09-27 Developing method for electron beam resist Pending JPS5760331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55134900A JPS5760331A (en) 1980-09-27 1980-09-27 Developing method for electron beam resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55134900A JPS5760331A (en) 1980-09-27 1980-09-27 Developing method for electron beam resist

Publications (1)

Publication Number Publication Date
JPS5760331A true JPS5760331A (en) 1982-04-12

Family

ID=15139140

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55134900A Pending JPS5760331A (en) 1980-09-27 1980-09-27 Developing method for electron beam resist

Country Status (1)

Country Link
JP (1) JPS5760331A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008135236A (en) * 2006-11-27 2008-06-12 Matsushita Electric Works Ltd Rotary switch

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008135236A (en) * 2006-11-27 2008-06-12 Matsushita Electric Works Ltd Rotary switch

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