JPS5768061A - Lead material for semiconductor device - Google Patents
Lead material for semiconductor deviceInfo
- Publication number
- JPS5768061A JPS5768061A JP55143908A JP14390880A JPS5768061A JP S5768061 A JPS5768061 A JP S5768061A JP 55143908 A JP55143908 A JP 55143908A JP 14390880 A JP14390880 A JP 14390880A JP S5768061 A JPS5768061 A JP S5768061A
- Authority
- JP
- Japan
- Prior art keywords
- strength
- heat resistance
- elements
- alloy
- contained
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/456—Materials
Landscapes
- Conductive Materials (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
PURPOSE:To inexpensively produce a lead having excellent characteristics such as heat resistance, tensile strength, conductivity, etc. by employing as blank for lead frame an alloy of with predetermined ranges of Zn, Sn and Fe. CONSTITUTION:Elements of Zn, Sn, and Fe are contained 0.5-3.0wt% in the blank of a lead frame forming an IC or the like, with residue of Cu as a Cu alloy. The additions of Sn and Fe improve the strength and heat resistance, Zn improves the strength and the quality in the ingot. When the elements are contained less than 0.5wt%, sufficient strength and heat resistance cannot be obtained, while when the elements are contained more than 3.0wt%, the thermal and electrical conductivities and bending workability are lowered. For example, a plate of 0.3mm.thick can be formed by facing work of an ingot made of raw alloy, hot working it, then annealing and cold rolling it repeatedly. In this manner, the lead material of desired characteristics can be inexpensively produced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55143908A JPS5768061A (en) | 1980-10-15 | 1980-10-15 | Lead material for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55143908A JPS5768061A (en) | 1980-10-15 | 1980-10-15 | Lead material for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5768061A true JPS5768061A (en) | 1982-04-26 |
| JPS6332854B2 JPS6332854B2 (en) | 1988-07-01 |
Family
ID=15349871
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55143908A Granted JPS5768061A (en) | 1980-10-15 | 1980-10-15 | Lead material for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5768061A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59140341A (en) * | 1983-01-29 | 1984-08-11 | Furukawa Electric Co Ltd:The | Copper alloy for lead frame |
| JPS605550A (en) * | 1983-06-24 | 1985-01-12 | Toshiba Corp | Electronic parts |
| US5853505A (en) * | 1997-04-18 | 1998-12-29 | Olin Corporation | Iron modified tin brass |
| US5882442A (en) * | 1995-10-20 | 1999-03-16 | Olin Corporation | Iron modified phosphor-bronze |
| US6132528A (en) * | 1997-04-18 | 2000-10-17 | Olin Corporation | Iron modified tin brass |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06304889A (en) * | 1993-04-21 | 1994-11-01 | Nakatetsuku Kk | Sucker unit and cap boxing device using this sucker unit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5424811A (en) * | 1977-07-27 | 1979-02-24 | Hitachi Cable Ltd | Copper alloy for lead conductor of semiconductor device |
| JPS5426219A (en) * | 1977-07-30 | 1979-02-27 | Furukawa Electric Co Ltd:The | Electric conductive copper alloy of superior solderability |
-
1980
- 1980-10-15 JP JP55143908A patent/JPS5768061A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5424811A (en) * | 1977-07-27 | 1979-02-24 | Hitachi Cable Ltd | Copper alloy for lead conductor of semiconductor device |
| JPS5426219A (en) * | 1977-07-30 | 1979-02-27 | Furukawa Electric Co Ltd:The | Electric conductive copper alloy of superior solderability |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59140341A (en) * | 1983-01-29 | 1984-08-11 | Furukawa Electric Co Ltd:The | Copper alloy for lead frame |
| JPS605550A (en) * | 1983-06-24 | 1985-01-12 | Toshiba Corp | Electronic parts |
| US5882442A (en) * | 1995-10-20 | 1999-03-16 | Olin Corporation | Iron modified phosphor-bronze |
| US5853505A (en) * | 1997-04-18 | 1998-12-29 | Olin Corporation | Iron modified tin brass |
| US6132528A (en) * | 1997-04-18 | 2000-10-17 | Olin Corporation | Iron modified tin brass |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6332854B2 (en) | 1988-07-01 |
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