JPS5771164A - Semiconductor device - Google Patents

Abstract

PURPOSE:To make a high-resistor element with a small occupied are by an N-P-N transistor process by a method wherein a one conductivity-type and high-concentration layer is diffused to reverse conductivity-type epitaxial layer provided on a substrate with the one conductivity-type from the position deviated in the transverse direction of the substrate side and the surface side. CONSTITUTION:After forming a P type impurity region 18 used as a diffusion source from a substrate side by ion implantation on a P type substrate 11 by an isolation region formation process, an N type epitaxial layer 12 is grown and the implantation region is simultaneously diffused upwards. Next, a P<+> diffusion layer 13A is formed on the surface of the layer 12 at the position alternatively offset from the diffusion layer 18 by a process diffusing a P<+> layer 13 demarcating the isolation region. Next, electrodes 16, 17 are provided by forming an N<+> region 14 on the layer 12 by a collector contact formation process, for example and a nearly U- shaped N type resistor layer is formed between the electrodes 16, 17. In this way, effective length of resistor can be increased comparing with normal pinch resistor and resistor element having a high resistance value can be made with a small area.