JPS5771176A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5771176A
JPS5771176A JP55147830A JP14783080A JPS5771176A JP S5771176 A JPS5771176 A JP S5771176A JP 55147830 A JP55147830 A JP 55147830A JP 14783080 A JP14783080 A JP 14783080A JP S5771176 A JPS5771176 A JP S5771176A
Authority
JP
Japan
Prior art keywords
region
collector
type
electrode
isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55147830A
Other languages
Japanese (ja)
Other versions
JPS6355223B2 (en
Inventor
Tsunenori Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55147830A priority Critical patent/JPS5771176A/en
Publication of JPS5771176A publication Critical patent/JPS5771176A/en
Publication of JPS6355223B2 publication Critical patent/JPS6355223B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/108—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having localised breakdown regions, e.g. built-in avalanching regions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To avoid the breakdown of a collector-base junction by a method wherein a breakdown-priventing region is provided between a part of a collector electrode provided at a collector region and an isolation region surrounding the collector region and the protective region and isolation region and directly connected by a depletion layer expanded when an excessive voltage is applied to the collector electrode. CONSTITUTION:An N<+> type collector buried region 6a is diffused and formed on a P type Si substrate 1 and N type layers 2 are epitaxially grown on the whole surface including the region 6a. Next, the layers 2 are formed as insular collector regions including the region 6a by a P<+> type isolation region 3 reaching the substrate 1 and a P<+> type base region 4 and an N<+> type emitter region 5 are formed by diffusion respectively in a region 2 and in the region 4 as well respectively. Then, an N<+> type collector contact region 6 connecting to the region 6a is provided for mounting a collector electrode C on the region 6. Furthermore, a P<+> type protective region 10 is provided at the isolation regin 3a side by locating under the electrode C. In this way, when an abnormal voltage is applied to the electrode C, a depletion layer 11 is created between the regions 3a and 10 to shortcircuit the regions 3a and 10.
JP55147830A 1980-10-22 1980-10-22 Semiconductor device Granted JPS5771176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55147830A JPS5771176A (en) 1980-10-22 1980-10-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55147830A JPS5771176A (en) 1980-10-22 1980-10-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5771176A true JPS5771176A (en) 1982-05-01
JPS6355223B2 JPS6355223B2 (en) 1988-11-01

Family

ID=15439198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55147830A Granted JPS5771176A (en) 1980-10-22 1980-10-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5771176A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5013076A (en) * 1973-06-04 1975-02-10

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5013076A (en) * 1973-06-04 1975-02-10

Also Published As

Publication number Publication date
JPS6355223B2 (en) 1988-11-01

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